Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice

SaeidNahaei, Sanam; Ha, Jaedu; Kim, Jong Su; Kim, G.H.; Lee, Dong Kun; Kang, Tae In

doi:10.1016/j.jlumin.2022.119440

Cited by 4 publications

(2 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 1d shows the normalized integrated emission intensities as a function of the reciprocal temperature for the QD sample. At lower temperature (3.2-30 K), the PL intensity was relatively large because the non-radiative recombination centers are frozen and inactivated, and consider that the internal quantum efficiency (IQE) is 100% at that temperature [44][45][46][47]. As the temperature rises, the PL intensity became smaller due to the non-radiative centers are thermally activated.…”

Section: Materials and Fabricationmentioning

confidence: 99%

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Yang,

Chen,

Wang

et al. 2023

Nano-Micro Lett.

View full text Add to dashboard Cite

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm−2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

show abstract

Section: Materials and Fabricationmentioning

confidence: 99%

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Yang,

Chen,

Wang

et al. 2023

Nano-Micro Lett.

View full text Add to dashboard Cite

show abstract

“…The commonly used methods include: growing a stress compensation layer in the active region before MQWs; 5,6 using ternary or quaternary compounds with the similarity to the lattice constants of InGaN as quantum barrier layer materials; 7,8 growing MQWs in the nonpolar or semipolar surfaces; 9 and doping GaN quantum barrier layer with silicon, etc. 10 These methods typically use a low indium content waveguide layer for good optical confinement. However, when its indium content is too high compared to the quantum barrier, it causes carriers to accumulate in the waveguide layer and deteriorates device performance.…”

mentioning

confidence: 99%

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Mu,

Dong,

Jia

et al. 2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical result. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.

show abstract

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Özdemi̇r

Baş

Kuruoğlu

et al. 2023

Journal of Luminescence

View full text Add to dashboard Cite

Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice

Cited by 4 publications

References 35 publications

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Contact Info

Product

Resources

About