Radiative lifetime measurements of SiH(A2Δ) by laser-induced fluorescence

Bauer, Werner; Becker, K. H.; Düren, R.; Hubrich, C.; Meuser, R.

doi:10.1016/0009-2614(84)85054-x

Cited by 40 publications

(24 citation statements)

References 7 publications

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“…The gate width is varied according to the fluorescence lifetime of the species of interest. The radiative lifetimes of SiH and OH are fairly similar, 534 ns 18 and 688Ϯ7 ns, 19 respectively. For both molecules, a 1.0 s gate width was used to collect the fluorescence.…”

Section: E Fluorescence Detectionmentioning

confidence: 88%

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

McCurdy

Bogart

Dalleska

et al. 1997

Review of Scientific Instruments

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Dissociative chemisorption of CH 4 on a cesiated Pt (111) A new instrument employing molecular beam techniques and laser induced fluorescence ͑LIF͒ for measuring the reactivity of gas phase radicals at the surface of a depositing film has been designed and characterized. The instrument uses an inductively coupled plasma source to create a molecular beam containing essentially all plasma species. A tunable excimer pumped dye laser is used to excite a single species in this complex molecular beam. LIF signals are imaged onto a gated, intensified charge coupled device ͑ICCD͒ to provide spatial resolution. ICCD images depict the fluorescence from molecules both in the molecular beam and scattering from the surface of a depositing film. Data collected with and without a substrate in the path of the molecular beam provide information about the surface reactivity of the species of interest. Here, we report the first measurements using the third generation imaging of radicals interacting with surfaces apparatus. We have measured the surface reactivity of SiH molecules formed in a 100% SiH 4 plasma during deposition of an amorphous hydrogenated silicon film. On a 300 K Si ͑100͒ substrate, the reactivity of SiH is near unity. The substrate temperature dependence ͑300-673 K͒ of the reactivity is also reported. In addition, reactivity measurements for OH molecules formed in a water plasma are presented. In contrast to the SiH molecule, the reactivity of OH radicals is 0.55Ϯ0.05 on the surface of a Si ͑100͒ substrate.

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Section: E Fluorescence Detectionmentioning

confidence: 88%

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

McCurdy

Bogart

Dalleska

et al. 1997

Review of Scientific Instruments

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“…The other experimental values range from 518 to 700 ns. A recent value of 534 Ϯ 23 ns has been obtained using the laser-induced fluorescence technique (46). There are several calculations providing the estimates of dissociation energy of SiH between 3.0 to 3.35 eV.…”

Section: Introductionmentioning

confidence: 99%

“…Cooper and Richards (30) also carried out an ab initio calculation of this frequency. Freedman and Irwin (31) ⌬ state of SiH (7,8,(42)(43)(44)(45) using the solar spectrum (7,8,41), electron bombardment (43)(44)(45), and laser-induced fluorescence (14,46). The solar values, ranging from 569 to 3200 ns, have been estimated from the oscillator strengths f 00 and are less reliable.…”

Section: Introductionmentioning

confidence: 99%

Fourier Transform Emission Spectroscopy of theA2Δ–X2Π Transition of SiH and SiD

Ram

Engleman

Bernath

1998

Journal of Molecular Spectroscopy

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“…Only the X 2 ⌸ and the A 2 ⌬ states of SiH and SiD have been extensively investigated experimentally. Work on these two states includes the determination of ⌳-doubling transition frequencies for X 2 ⌸, 38,63,65,76 radiative lifetimes and oscillator strengths of the A 2 ⌬ϪX 2 ⌸ system, 43,45,47,61,64,74 various molecular constants, 55,56,67,72,78,79,84 transition moments, 66 ionization potentials, 55,80,81 and dissociation energies and enthalpies of formation. 55,59,64,68,80,81,83 To our knowledge, only a limited number of experimental papers deal with the higher excited states, but the extracted parameters useful to the present theoretical work are very few, limited mostly to term values.…”

Section: Introductionmentioning

confidence: 99%

An accurate description of the ground and excited states of SiH

Καλέμος

Mavridis

Metropoulos

2002

The Journal of Chemical Physics

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The astrophysical importance of the SiH radical has motivated significant experimental and theoretical work. However, only the X 2 ⌸ and A 2 ⌬ states of SiH have been extensively investigated experimentally, while the study of higher excited states is rather limited. From a theoretical point of view, most of the studies have been focused on spectroscopic and thermochemical quantities of the ground state. The lack of accurate spectroscopic parameters (r e ,D e , e , e x e ,␣ e ,D e ,T e ) pertaining to higher excited states was the driving force of the present work, in line with our previous study of the isovalent CH molecule ͓A. Kalemos, A. Mavridis, and A. Metropoulos, J. Chem. Phys. 111, 9536 ͑1999͔͒. Using the multireference configuration interaction approach coupled with very large correlation-consistent basis sets, we have constructed potential energy curves for 18 molecular states correlating to Si( 3 P,At the same level, the potential energy curve of the ground SiH ϩ state (X 1 ⌺ ϩ ) has also been constructed. We report total energies, dissociation energies, and the usual spectroscopic constants for 28 2 H and for all states studied. Most of our results are in excellent agreement with existing experimental values. In particular, we believe that our dissociation energy for the X state, D e ϭ73.28 kcal/mol, is the most reliable reported so far in the literature.

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Radiative lifetime measurements of SiH(A2Δ) by laser-induced fluorescence

Cited by 40 publications

References 7 publications

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

Fourier Transform Emission Spectroscopy of theA2Δ–X2Π Transition of SiH and SiD

An accurate description of the ground and excited states of SiH

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