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Aggarwal, K. M.; Keenan, F. P.

doi:10.1016/j.adt.2015.07.003

Cited by 1 publication

(4 citation statements)

References 47 publications

(50 reference statements)

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“…We find a systematic offset in the AMBiT 4p 4 4d energy levels compared to experiment of 2100(900) cm −1 , which originates from the relaxation of the 4p orbitals in the different configurations and is not completely accounted for by the CI and MBPT approach. Our overall relative accuracy is ∼0.3%, which compares favorably with the previous theory 2.6% [32]; cf. Table III.…”

Section: Ambitsupporting

confidence: 86%

“…The gA ratio using HFR standard scaling, before any fitting, is however 1.8 (2.2 × 10 12 /1.2 × 10 12 ), not too distinct from a value of 0.7 obtained from FAC calculations. It is also similar to a GRASP calculation indicating a ratio of 1.2 [32,57]. Table II, and in addition the Cowan results from the fit to experimental data are listed.…”

Section: Spectrum Of Sn 15+supporting

confidence: 75%

“…[16]), and by GRASP in the case of Sn 15+ (reproduced from Ref. [32]) as well as by AMBiT. Sn 15+ levels with J > 5/2 are not listed as transitions from these levels are not observed in our spectra.…”

Section: Spectrum Of Sn 15+mentioning

confidence: 91%

“…Identifications of lines in both Sn 14+ and Sn 15+ are further strengthened by line intensity calculations using the collisional-radiative modeling capabilities of the Flexible Atomic Code (FAC) [31]. We compare our obtained level energies with calculations performed with the Fock-Space Coupled-Cluster (FSCC) approach for Sn 14+ [16] and General-purpose Relativistic Atomic Structure Package (GRASP) calculations for Sn 15+ [32]. In this work, we also provide state-of-the-art calculations of Sn 15+ using the configuration-interaction many-body perturbation code AMBiT [33].…”

Section: Introductionmentioning

confidence: 95%

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EUV spectroscopy of highly chargedSn13+−Sn15+ions in an electron-beam ion trap

et al. 2020

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Extreme-ultraviolet (EUV) spectra of Sn 13+ −Sn 15+ ions have been measured in an electron-beam ion trap (EBIT). A matrix inversion method is employed to unravel convoluted spectra from a mixture of charge states typically present in an EBIT. The method is benchmarked against the spectral features of resonance transitions in Sn 13+ and Sn 14+ ions. Three new EUV lines in Sn 14+ confirm its previously established level structure. This ion is relevant for EUV nanolithography plasma but no detailed experimental data currently exist. We used the Cowan code for first line identifications and assignments in Sn 15+. The collisional-radiative modeling capabilities of the Flexible Atomic Code were used to include line intensities in the identification process. Using the 20 lines identified, we have established 17 level energies of the 4p 4 4d configuration as well as the fine-structure splitting of the 4p 5 ground-state configuration. Moreover, we provide state-of-the-art ab initio level structure calculations of Sn 15+ using the configuration-interaction many-body perturbation code AMBiT. We find that the here-dominant emission features from the Sn 15+ ion lie in the narrow 2% bandwidth around 13.5 nm that is relevant for plasma light sources for state-of-the-art nanolithography.

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Section: Ambitsupporting

confidence: 86%

Section: Spectrum Of Sn 15+supporting

confidence: 75%