2013
DOI: 10.1103/physrevb.87.235313
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Radiative recombination and optical gain spectra in biaxially strainedn-type germanium

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Cited by 73 publications
(86 citation statements)
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“…GeSn alloy disorder scattering was also factored in. Finally, the indirect interband transitions, which may bring in (relatively small) absorption or gain 32,33 , are also included. The valence band FCA was taken into account in a simplified manner.…”
Section: Resultsmentioning
confidence: 99%
“…GeSn alloy disorder scattering was also factored in. Finally, the indirect interband transitions, which may bring in (relatively small) absorption or gain 32,33 , are also included. The valence band FCA was taken into account in a simplified manner.…”
Section: Resultsmentioning
confidence: 99%
“…The impact of tensile strain on the optical gain in pure Ge was only very recently investigated. 29 Here we calculate the optical gain including also the intra-valence band absorption, not included to date for Ge(Sn) based system.…”
mentioning
confidence: 99%
“…In order to turn Ge into a direct bandgap semiconductor, 1.4%-2% biaxial strain must be applied [2,[64][65][66][67]. A direct bandgap GeSn laser was recently demonstrated, but that required >12% Sn [6].…”
Section: Discussionmentioning
confidence: 99%