Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots

Melliti, A.; Maaref, M.A.; Hassen, F.; Hjiri, M.; Maâref, H.; Tignon, Jérôme; Sermage, B.

doi:10.1016/j.ssc.2003.08.020

Cited by 26 publications

(14 citation statements)

References 20 publications

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“…In both samples, above a certain temperature the decay time falls to a sub-nanosecond scale due to the activation of non-radiative channels. 4,13,37,[39][40][41] The observed temperatures at which PL decay times begin to decrease in Figure 5 are in good correspondence with the QD Arrhenius plots. As observed for the integrated intensity, the PL decay time increases in the low temperature range.…”

Section: Resultssupporting

confidence: 71%

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

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Section: Resultssupporting

confidence: 71%

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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“…In this temperature range, the carriers can escape from the smaller QDs and they can be recaptured from the bigger one [8-10]. In fact, since the bigger QDs have lower transition rates than the smaller ones, the carrier transfer from the latter to the former causes a slight increase of the radiative decay time [11,12]. For T > 200 K, a strong reduction of the decay time occurs.…”

Section: Resultsmentioning

confidence: 99%

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

Rainò¹,

Visimberga

Salhi³

et al. 2007

Nanoscale Res Lett

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We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

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“…It has been previously reported that larger QDs generally exhibit smaller OS than smaller QDs. 61,62 The temperature variation of the radiative lifetime changes the relative contribution of the residual nonradiative recombination in Eq. (6) and therefore the increase of the radiative lifetime slowly quenches the PL intensity for the temperature rise up to $140 K.…”

Section: Time-resolved Pl Measurements and Temperature Dependence mentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots

Cited by 26 publications

References 20 publications

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

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