Radiative recombination of excitons in disk-shaped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">In</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">In</mml:mi><mml:mi mathvariant="normal">P</mml:mi></mml:mrow></mml:math>quantum dots

Tomimoto, Shinichi; Kurokawa, Atsushi; Sakuma, Yoshiki; Usuki, Tatsuya; Masumoto, Yasuaki

doi:10.1103/physrevb.76.205317

Cited by 17 publications

(17 citation statements)

References 20 publications

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“…The result obtained using (67) is given in (25). We find the same approximate result as that given in (25) in both regimes, Γ ex << KT and Γ ex >> KT , contrary to the findings of Citrin et al 21 in the case of III-V quantum well excitons. The difference in the results seems to originate from an incorrect evaluation of the exciton density in terms of the exciton spectral density function by Citrin et al 21 .…”

Section: B Average Lifetime Of a Thermal Excitonsupporting

confidence: 78%

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Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenideMoS2

et al. 2016

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We present results on the radiative lifetimes of excitons and trions in a monolayer of metal dichalcogenide MoS2. The small exciton radius and the large exciton optical oscillator strength result in radiative lifetimes in the 0.18-0.30 ps range for excitons that have small in-plane momenta and couple to radiation. Average lifetimes of thermally distributed excitons depend linearly on the exciton temperature and can be in the few picoseconds range at small temperatures and more than a nanosecond near room temperature. Localized excitons exhibit lifetimes in the same range and the lifetime increases as the localization length decreases. The radiative lifetimes of trions are in the hundreds of picosecond range and increase with the increase in the trion momentum. Average lifetimes of thermally distributed trions increase with the trion temperature as the trions acquire thermal energy and larger momenta. We expect our theoretical results to be applicable to most other 2D transition metal dichalcogenides.

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Section: B Average Lifetime Of a Thermal Excitonsupporting

confidence: 78%

“…If one uses the following phenomenological form for the exciton spectral density function, The ensemble average lifetime τ sp is then (see (25)),…”

Section: B Average Lifetime Of a Thermal Excitonmentioning

confidence: 99%

Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenideMoS2

et al. 2016

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“…Our results showed that the motion of carriers surrounding QDs played a crucial role in decoherence. Such environmental effects may be avoided by photoinjecting carriers in a resonant manner, where the QD decoherence would be simply determined by a radiative decay of ∼ 1.5 ns lifetime, which has recently been determined by PL up-conversion [17].…”

Section: Discussionmentioning

confidence: 99%

Decoherence of single photons from an InAs/InP quantum dot emitting at a 1.3 μm wavelength

Kuroda

Sakuma

Sakoda

et al. 2009

Phys. Status Solidi (c)

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The coherence of light emitted from an isolated InAs/InP quantum dot (QD) is characterized by observing the firstorder correlation functions, g(1)(τ) of the electric field. The function of g(1)(τ) at 8 K shows an exponential decay with a decay time of 130 (±5) ps, corresponding to a Lorentzian spectral shape with 10.2 (±0.4) μeV in full width at half maximum. We observed systematic variation in g(1)(τ) as a function of temperature and excitation power. Our findings suggest that the motion of carriers surrounding QDs had a crucial effect on the decoherence (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The dephasing time is much shorter than the radiative lifetime of the excitons in 3 ML QRDs, 1.58 ns. 9 The quantum beat starts with an oscillation minimum at t = 0 and oscillates with a period of T = 1.2 ps, reflecting the biexciton binding energy defined by the energy difference between exciton transition and excitonbiexciton transition. The oscillation minimum at t = 0 shows the exciton-biexciton quantum beat.…”

Section: The Enhanced Binding Energy For Biexcitons In Inas Quantum Dotsmentioning

confidence: 99%

“…9 The radiative rate 1 / r of QDs is proportional to f 2 , where f is the oscillator strength and is the optical transition frequency. Using the optical transition energies of 1.00 eV for f4 and 1.08 eV for f3, we can evaluate that f for 4 ML InAs QRDs is larger than f for 3 ML InAs QRDs by 30%.…”

Section: The Enhanced Binding Energy For Biexcitons In Inas Quantum Dotsmentioning

confidence: 99%

The enhanced binding energy for biexcitons in InAs quantum dots

Masumoto

Yoshida

Ikezawa

et al. 2011

Applied Physics Letters

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We observed that the biexciton binding energy in InAs quantum rhombic disks (QRDs) is enhanced by twice compared with that for InAs quantum dots (QDs) so far reported around 1.24 μm nearby the telecommunication wavelength. The heterodyne-detected four-wave-mixing detected the exciton-biexciton quantum beat superposed on photon echo decay, giving the biexciton binding energy of 3.4 meV to 3 monolayer (ML) InAs QRDs and 4.1 meV to 4 ML InAs QRDs, respectively. The largest biexciton binding energy of 4.1 meV in InAs QDs is ascribed to increased electron-hole overlap in confined geometry with a minimized strain distribution.

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Radiative recombination of excitons in disk-shapedInAs∕InPquantum dots

Cited by 17 publications

References 20 publications

Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenideMoS2

Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenideMoS2

Decoherence of single photons from an InAs/InP quantum dot emitting at a 1.3 μm wavelength

The enhanced binding energy for biexcitons in InAs quantum dots

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