Radiative recombination of holes in delta-p-doped gallium arsenide

Gilinsky, A. M.; Журавлев, К. С.; Lubyshev, D I; Migal, V. P.; Preobrazhenskii, V.V.; Семягин, Б.Р.

doi:10.1016/0749-6036(91)90298-6

Cited by 12 publications

(5 citation statements)

References 6 publications

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“…The width of this 2DHG band increases with increasing doping as predicted by the calculations. 6 The spectral position and shape of these observed broad bands, which we ascribe to the radiative recombination of photocreated electrons with holes of the 2DHG, are very similar to those already reported for ␦-doping spikes located at 0.02 m ͑Ref. 9͒ and 0.5 m ͑Ref.…”

supporting

confidence: 76%

“…As reported previously, 6 we observed that the intensity of the 2DHG band decreases with increasing temperatures and is no longer distinguishable from the background signal at temperatures higher than 60 K. When the sample temperature is raised from 2 to 60 K, the intensity of the FE emission decreases by a factor of 3, meanwhile the intensity of the 2DHG bands decreases by two orders of magnitude. Recent self-consistent calculations 5 showed that the model that ascribes the 2DHG band to the radiative-recombination processes between photoexcited electrons in extended states and confined holes from the 2DHG does not account for this quenching effect.…”

supporting

confidence: 73%

“…Moreover, the observed temperature dependence of the PL emission bands associated with the two-dimensional hole gas ͑2DHG͒ in p-type ␦-doped layers exhibits an interesting thermal quenching effect that has attracted interest recently. [4][5][6] It has been argued that the thermal quenching (T ϳ60 K) of the 2DHG-related emission band from p-type ␦-doped GaAs layers was probably due to the escape of holes from the ␦-potential well to the nearby bulk material. 6 However, the rapid thermal quenching (Tϳ12 K) observed in p-type Si layers by Buyanova and co-workers was explained in terms of a shallow electron-potential well induced by photoexcited holes, which are captured by the ␦-doping well.…”

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confidence: 99%

“…[4][5][6] It has been argued that the thermal quenching (T ϳ60 K) of the 2DHG-related emission band from p-type ␦-doped GaAs layers was probably due to the escape of holes from the ␦-potential well to the nearby bulk material. 6 However, the rapid thermal quenching (Tϳ12 K) observed in p-type Si layers by Buyanova and co-workers was explained in terms of a shallow electron-potential well induced by photoexcited holes, which are captured by the ␦-doping well. 4 According to this model, the quenching of the 2DHG luminescence is due to the thermal activation of confined electrons from the photoinduced-potential well to the continuous states in the host material.…”

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confidence: 99%

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Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers

et al. 1999

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The photogenerated carrier-induced band-edge modifications of beryllium single ␦-doped GaAs layers comprising a two-dimensional hole gas ͑2DHG͒ were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures. ͓S0163-1829͑99͒01607-0͔Delta-doped structures have already been extensively investigated as they represent the state of the art in doping profile and became quite important for the microelectronic industry. 1 Although the n-type ␦-doping structures have received a great deal of attention so far, only recent the p-type ␦-doping structures became the subject of systematic investigations. 2-4 One remarkable contrast between these two systems is the fact that in photoluminescence ͑PL͒ measurements carried out on single isolated ␦-doped layers, the expected two-dimensional ͑2D͒ emission bands are only observed in p-type, but not in n-type structures. Moreover, the observed temperature dependence of the PL emission bands associated with the two-dimensional hole gas ͑2DHG͒ in p-type ␦-doped layers exhibits an interesting thermal quenching effect that has attracted interest recently. [4][5][6] It has been argued that the thermal quenching (T ϳ60 K) of the 2DHG-related emission band from p-type ␦-doped GaAs layers was probably due to the escape of holes from the ␦-potential well to the nearby bulk material. 6 However, the rapid thermal quenching (Tϳ12 K) observed in p-type Si layers by Buyanova and co-workers was explained in terms of a shallow electron-potential well induced by photoexcited holes, which are captured by the ␦-doping well. 4 According to this model, the quenching of the 2DHG luminescence is due to the thermal activation of confined electrons from the photoinduced-potential well to the continuous states in the host material.The comparison between the luminescence spectra from n-and p-type ␦-doping GaAs structures was recently performed through rigorous self-consistent band-structure calculations. 5 It was particularly emphasized the role played by the photoinduced electron-confinement effect on the realistic description of the PL spectra from p-type ␦-doped structures. In the present paper we report on the results obtained by means of PL, selective photoluminescence ͑SPL͒, and photoluminescence excitation ͑PLE͒ spectroscopies of Be ␦-doped GaAs structures. The aim of the paper is to provide direct evidence for such photoinduced effect as proposed by Buyanova and co-workers and confirmed by theory. A set of three samples was grown by molecular beam epitaxy on a semi-insulating GaAs ͑001͒ substrate. The samples comprise a 0.42-m-thick GaAs buffer layer, a plane of Be atoms, a 0.18-m-thick undoped GaAs layer, and a 50-A-thick Be-doped GaAs cap layer ( pϭ2 ϫ10 18 cm Ϫ3 ). The growth temperature was 580°C for the buffer layer and 520°C for t...

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supporting

confidence: 76%

supporting

confidence: 73%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers

et al. 1999

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“…Gilinsky et al [20] showed the photoluminescense spectrum for 4 Â 10 12 cm À2 , 1:8 Â 10 13 cm À2 , and 3:6 Â 10 13 cm À2 ; with E hh0 À E lh0 % 8 meV, 20 meV, and 30 meV, respectively. Using the Thomas-Fermi-Dirac approximation we obtain E hh0 À E lh0 % 12:5 meV, 35 meV, and 55 meV.…”

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confidence: 99%

Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type ?-Doped Quantum Wells in Si and GaAs

Gaggero‐Sager¹

2002

phys. stat. sol. (b)

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Subject classification: 73.21.Fg; S5.11; S7.12 We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schrö dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density Approximation in the case of a hole gas. Using the Thomas-Fermi-Dirac approximation, we present an analytical expression for the Hartree-Fock potential. We compare the results obtained from this model with those obtained through Schrö dinger-Poisson self-consistent calculations. As a result of this comparison, we saw that the model presented, in spite of its simplicity, gives very good results. In particular, it practically fixes the energy differences between the occupied levels of the well. There is agreement between the results of our two calculations (self-consistent and with Thomas-Fermi-Dirac model) with the experimental results in the three systems (B d-doped quantum wells in Si, Be d-doped quantum wells in GaAs, and p-type Si d-doped quantum wells in GaAs).

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Electronic and optical properties of low-dimensional semiconductor structures

Wagner

Physics and Technology of Semiconductor Quantum Devices

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This paper reviews the use of photoluminescence and photoluminescence excitation spectroscopy for the study of low-dimensional electron and hole gases in modulation- and delta-doped semiconductor heterostructures. This type of spectroscopy provides information on the subband structure and band filling in those structures. In addition, insight is gained in electron-hole many-body interactions, such as the so- called Fermi edge singularity, and in the electron- hole interaction strength. The latter information can be extracted from, e.g., the optical measurement of electron spin relaxation kinetics. Selected examples, mainly based on GaAs/AlxGa1-xAs heterostructures, will be discussed

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Radiative recombination of holes in delta-p-doped gallium arsenide

Cited by 12 publications

References 6 publications

Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers

Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers

Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type ?-Doped Quantum Wells in Si and GaAs

Electronic and optical properties of low-dimensional semiconductor structures

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