2008
DOI: 10.1063/1.2943262
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Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition

Abstract: Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition J. Appl. Phys. 112, 043105 (2012); 10.1063/1.4745893Photoreflectance and surface photovoltage spectroscopy of beryllium-doped Ga As ∕ Al As multiple quantum wells J. Appl. Phys. 98, 023508 (2005); 10.1063/1.1978970 Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wellsPhotoluminescence ͑PL͒ spectra of beryllium ␦-doped GaAs/ AlAs multiple quantum wells are stud… Show more

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Cited by 14 publications
(9 citation statements)
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References 48 publications
(45 reference statements)
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“…The presence of a large concentration of dopant impurities also causes significant reduction of a band gap. At high doping levels the bound states of impurities broaden into a distinct impurity band because of the overlap of impurity wave functions, and Mott transition metal-insulator occurs [7]. The impurity band merges with the conduction band and the conduction band edge moves downward.…”
Section: Discussionmentioning
confidence: 99%
“…The presence of a large concentration of dopant impurities also causes significant reduction of a band gap. At high doping levels the bound states of impurities broaden into a distinct impurity band because of the overlap of impurity wave functions, and Mott transition metal-insulator occurs [7]. The impurity band merges with the conduction band and the conduction band edge moves downward.…”
Section: Discussionmentioning
confidence: 99%
“…From the binding energies, the calculated Bohr radius of the Si donor is equal to a Si ≈ 5 nm and for the Be acceptor it is equal to a Be ≈ 1.9 nm. These results enable calculation of the critical concentration of the Mott transition [28,29] However, free and bound excitons still form in those MQWs, but also the nonradiative recombination rate increases.…”
Section: Resultsmentioning
confidence: 99%
“…The recombination processes near or over the Mott transition of p-type GaAs multiple quantum wells are described in Refs. [28,29].…”
Section: Introductionmentioning
confidence: 99%
“…For acceptor doping, as widely reported in the field of MBE of GaAs [72][73][74][75], Be is a good candidate for heavy p-doping and for steep impurity profiles because of its low diffusion coefficient [76]. The covalent radius of Be is similar to the radii of Ga and As, and the lattice strain in Be-doped GaAs was expected to be small.…”
Section: Be Doping Characteristics For the P + -Gaas Layermentioning
confidence: 90%