Radiative transitions of layered semiconductor GaS doped with P

Shigetomi, S.; Ikari, Tetsuo

doi:10.1016/j.jlumin.2005.08.002

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…It is well known that impurity states play an important role in the semiconducting optoelectronic devices. [17][18][19][20][21] Based on previous studies, Mg doping in a semiconductor is common in particular for GaN-based semiconductors to achieve p-type conductivity. 22,23 Moreover, the capability of achieving p-type doping in a GaN semiconductor has led to rapid development of the III-Nitride semiconductor light-emitting diodes (LED) technology by improving the internal quantum efficiency 24,25 and current injection efficiency in LEDs.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of p-type Mg-doped GaS and GaSe nanosheets

Peng

Xia

Zhang

et al. 2014

Phys. Chem. Chem. Phys.

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The characteristics are investigated in the p-type Mg-doped GaS and GaSe nanosheets by means of first-principles calculations, showing that with increasing Mg doping concentration, the formation energy increases while the transition level decreases. Moreover, Mg impurity can create a shallower acceptor level in the GaSe nanosheet than in the GaS nanosheet. In particular, the transition level is 39.3 meV when Mg doping concentration is 0.056 in the GaSe nanosheets, which indicates that Mg impurity can offer effective p-type carriers in the GaSe nanosheets.

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Section: Introductionmentioning

confidence: 99%

Characteristics of p-type Mg-doped GaS and GaSe nanosheets

Peng

Xia

Zhang

et al. 2014

Phys. Chem. Chem. Phys.

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“…We have reported that the 1.85, 1.95, 2.002, 2.08, and 2.12 eV emission bands due to the complex centers of the doped impurities and vacancies are observed in the PL spectra of Zn, Cd, Mn, As, and P-doped p-GaS, respectively. [7][8][9][10][11] These emission bands are caused by the recombination mechanism of the configurational coordinate (CC) model. Currently, the radiative transitions of Sn-doped n-GaS have not yet been investigated.…”

mentioning

confidence: 99%

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Shigetomi¹,

Ikari

2010

Jpn. J. Appl. Phys.

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The radiative recombination mechanisms of Sn-doped GaS have been investigated by photoluminescence (PL) measurements. The PL spectrum at 77 K appears in the energy region between 1.25 and 2.3 eV and is dominated by two emission bands. The temperature dependence of the full-width at half-maximum and the shapes of the PL spectra of the two emission bands are characterized by the recombination mechanism of the configurational coordinate model. The origins of the two emission bands are related to the complex centers of vacancies and impurity atoms.

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“…We have reported that the 1.85, 1.95, 1.97, 2.002, 2.08, and 2.12 eV emission bands due to the complex centers of the doped impurities and vacancies are observed in the PL spectra of Zn, Cd, Cu, Mn, As, and P-doped GaS, respectively. [8][9][10][11][12][13] These emission bands have been explained on the basis of the recombination mechanism of the configurational coordinate model. Thus far, the radiative transitions in Ge-doped GaS have not yet been investigated.…”

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confidence: 99%

Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge

Shigetomi

Ikari

2009

jjap

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The radiative recombination mechanisms of Ge-doped GaS have been investigated by photoluminescence measurements. The photoluminescence spectrum (at 77 K) related to the impurity levels is dominated by two emission bands at 2.30 and 1.96 eV. From the temperature dependences of the photoluminescence intensity and peak energy, it is found that the 2.30 eV emission band is due to the transition between donor and acceptor levels. The 1.96 eV emission band is related to the donor-vacancy complex center.

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Radiative transitions of layered semiconductor GaS doped with P

Cited by 6 publications

References 17 publications

Characteristics of p-type Mg-doped GaS and GaSe nanosheets

Characteristics of p-type Mg-doped GaS and GaSe nanosheets

Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge

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