Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

Mizokuchi, Raisei; Buğu, Sinan; Hirayama, Masaru; Yoneda, Jun; Kodera, Tetsuo

doi:10.1038/s41598-021-85231-4

Cited by 7 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…21) Here we focus on the technique called RF reflectometry, which is often employed for fast qubit readout, for RF performance characterization. [22][23][24][25][26][27][28] Figure 3(a) shows an equivalent circuit diagram. Changes in the conductance and/or capacitance of the QDs is read out using a resonance circuit comprising the inductance of a coil and the parasitic capacitance(s).…”

Section: Rf Measurement 41 Rf Reflectometrymentioning

confidence: 99%

Cryogenic flip-chip interconnection for silicon qubit devices

Futaya,

Mizokuchi,

Taguchi

et al. 2024

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Interfacing qubits with peripheral control circuitry poses one of the major common challenges toward realization of large-scale quantum computation. Spin qubits in silicon quantum dots are particularly promising for scaling up, owing to the potential benefits from the know-how of the semiconductor industry. In this paper, we focus on the interposer technique as one of the potential solutions for the quantum-classical interface problem and report DC and RF characterization of a silicon quantum dot device mounted on an interposer. We demonstrate flip-chip interconnection with the qubit device down to 4.2 K by observing Coulomb diamonds. We furthermore propose and demonstrate a laser-cut technique to disconnect peripheral circuits no longer in need. These results may pave the way toward system-on-a-chip quantum-classical integration for future quantum processors.

show abstract

Section: Rf Measurement 41 Rf Reflectometrymentioning

confidence: 99%

Cryogenic flip-chip interconnection for silicon qubit devices

Futaya,

Mizokuchi,

Taguchi

et al. 2024

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this analysis, = L 10 nH, = C 100fF, and = R 1 MΩ. 13,28) C and R are determined based on typical values for real qubit systems; on the other hand, a small inductance is chosen for L, so that the resonance frequency is in the order of GHz. Such a relatively high resonance frequency for a spin qubit readout will be desirable in future integrated qubit systems where dense frequency multiplexing and wide bandwidth are needed at the same time.…”

Section: Simulation Modelmentioning

confidence: 99%

“…Practical quantum computation would require millions of qubits. 1,2) RF reflectometry is a promising technique to readout qubits in such a large-scale system, [3][4][5][6][7][8][9][10][11][12][13][14] thanks to its capability for signal multiplexing 3,15) and gate-based dispersive readout. 4,7) Reflectometry signals from the resonance circuits connected to qubits can be multiplexed in the frequency domain 4) as well as by phase encoding, using common readout circuitry outside the qubit chip.…”

Section: Introductionmentioning

confidence: 99%

Mixed-mode RF reflectometry of quantum dots for reduction of crosstalk effects

Machida

Mizokuchi²,

Yoneda³

et al. 2023

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

RF reflectometry is a promising technique for spin qubit readout, suitable for large-scale integrated qubit systems by combination with multiplexing techniques and gate-based readout. However, one of the challenges in such systems would be that the accuracy of RF readout of individual qubits can be degraded by crosstalk among dense RF readout lines. In this study, we propose a mixed-mode RF reflectometry to reduce the effect of the crosstalk and verify its effectiveness by electromagnetic field simulations. The results of the simulations show the possibility of suppressing the influence of crosstalk by using mixed modes.

show abstract

Gate reflectometry of single-electron box arrays using calibrated low temperature matching networks

Filmer

Huebner

Zirkle

et al. 2022

Sci Rep

View full text Add to dashboard Cite

Sensitive dispersive readouts of single-electron devices (“gate reflectometry”) rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an impedance transformer to match the impedance of the load to the characteristic impedance of the transmission line and thus obtain the best sensitivity and signal-to-noise ratio. This is particularly important for measuring large impedances, typical for dispersive readouts of single-electron devices because even a small mismatch will cause a strong signal degradation. When performing RF measurements, a calibration and error correction of the measurement apparatus must be performed in order to remove errors caused by unavoidable non-idealities of the measurement system. Lack of calibration makes optimizing a matching network difficult and ambiguous, and it also prevents a direct quantitative comparison between measurements taken of different devices or on different systems. We propose and demonstrate a simple straightforward method to design and optimize a pi matching network for readouts of devices with large impedance, $$Z \ge 1\hbox {M}\Omega$$ Z ≥ 1 M Ω . It is based on a single low temperature calibrated measurement of an unadjusted network composed of a single L-section followed by a simple calculation to determine a value of the “balancing” capacitor needed to achieve matching conditions for a pi network. We demonstrate that the proposed calibration/error correction technique can be directly applied at low temperature using inexpensive calibration standards. Using proper modeling of the matching networks adjusted for low temperature operation the measurement system can be easily optimized to achieve the best conditions for energy transfer and targeted bandwidth, and can be used for quantitative measurements of the device impedance. In this work we use gate reflectometry to readout the signal generated by arrays of parallel-connected Al-AlOx single-electron boxes. Such arrays can be used as a fast nanoscale voltage sensor for scanning probe applications. We perform measurements of sensitivity and bandwidth for various settings of the matching network connected to arrays and obtain strong agreement with the simulations.

show abstract

Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

Cited by 7 publications

References 37 publications

Cryogenic flip-chip interconnection for silicon qubit devices

Cryogenic flip-chip interconnection for silicon qubit devices

Mixed-mode RF reflectometry of quantum dots for reduction of crosstalk effects

Gate reflectometry of single-electron box arrays using calibrated low temperature matching networks

Contact Info

Product

Resources

About