Radiological analysis of pulmonary sequestration

Song, Han Joon; Park, Mi Sook; Lim, Joo Won; Lee, Sun Wha; Yoon, Yup; Ahn, Changhyun

doi:10.3348/jkrs.1987.23.5.743

Cited by 2 publications

(2 citation statements)

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“…[1,2] The active layer normally consists of a single AOS, such as the most representative amorphous InGaZnO (a-IGZO). [3] The AOS TFTs successfully challenge the dominant position of their incumbent silicon counterparts in next-generation displays [4][5][6][7][8] and also exhibit great potential in flexible and wearable electronics, [9,10] optoelectrical systems, [11,12] flexible and 3D integrated circuit (3DIC), [13,14] heralding a flourishing future of AOSs. However, the evolving requirements of these technology frontiers can no longer be fulfilled by the moderatemobility a-IGZO, while other relatively high-mobility AOSs normally suffer insufficient stability, such as In 2 O 3 , InZnO, and ZnON.…”

Section: Introductionmentioning

confidence: 99%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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Section: Introductionmentioning

confidence: 99%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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“…Al-doped ZnO films have been prepared by several deposition techniques such as metal organic chemical vapor deposition, photo-MOCVD, reactive evaporation, spray pyrolysis, sol-gel process and dc and rf sputtering [8][9][10][11][12][13][14][15][16][17][18]. Radio frequency sputtering is widely used because large scale uniform films can be attained.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

Lü

Zhang

Diao

et al. 2011

MSF

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Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreasedwith an increase of the Dst. The films showed a smaller grain size. The surfacework function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

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Radiological analysis of pulmonary sequestration

Cited by 2 publications

References 0 publications

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

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