In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5µm to 4µm) and different active zone doping (n-type versus p-type), same 1µm thick p-type active zone doping with different SL designs (InAs-rich versus GaSbrich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4µm active zone thickness, showing a QE that reaches 61% at λ = 2µm and 0V bias voltage.