Radiotracer diffusion of cobalt, iron, and chromium in dislocation-free germanium

Abstract

Diffusion of the transition metals Co, Fe, and Cr into single-crystal germanium is found to be fast processes at temperatures relevant to the fabrication of semiconductor devices. These results were obtained from experiments in which electronic-grade Ge samples were provided with a radioactive surface source and short time annealed in a lamp furnace at temperatures ranging from 600to900°C. Diffusion coefficients were determined from penetration profiles of the radioisotopes Co57, Fe59, and Cr51. The results are interpreted within the framework of interstititial-substitutional diffusion and compared with earlier diffusion data on Ge crystals.

Electronic properties of iron and cobalt impurity centres in germanium

“…Similar difficulties were e.g. encountered in diffusivity studies of Co 8 . For the DLTS study in the present paper, a different approach has been used, i.e.…”