Radome-covered substrate-integrated cavity-backed patch antenna surrounded by dielectric material

Asad, Muhammad; Shafique, Muhammad Farhan

doi:10.1017/s1759078715000148

Cited by 2 publications

(1 citation statement)

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“…SIW cavities are made using conventional PCB fabrication process thus involves no machining of metal parts or metal casting. Another process of pattern restoration was presented recently which uses electromagnetic band‐gap (EBG) structures . These structures are placed on the surface of surrounding dielectric which suppresses all propagating modes including surface waves.…”

Section: Introductionmentioning

confidence: 99%

Performance restoration of dielectric embedded antennas using omega like complementary split ring resonators

Asad

Shafique

Khan

2016

Micro & Optical Tech Letters

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This research work addresses the performance deterioration challenges of dielectric embedded patch antenna. Antennas installed on the surface of high speed aerial vehicles are usually surrounded by dielectric coating to cater for the environmental effects like friction and humidity, the presence of dielectric in the surrounding encourages the propagation of strong surface waves causing the pattern deterioration and increase in return loss. The surface waves are suppressed in two stages first with the help of substrate integrated waveguide cavity created on the back of patch antenna to reduce the leakage currents. Secondly the remaining surface waves which propagate in the dielectric are suppressed by simply placing an array of modified complementary split ring resonator (CSRR) on the surface of surrounding dielectric. CSRR is known to offer band-gap characteristics thus it ensures complete blockage of the fundamental mode of surface waves without any additional fabrication complexity. The radiation pattern is restored and the return loss is reduced using the proposed techniques. The measured results from the fabricated prototype authenticate the proposed concept. Figure 1 SIW cavity backed antenna embedded in dielectric (a) Side view (b) Top view, the dimensions are L P 5 50 mm, W p 5 30.4 mm, h dc 5 12 mm, L dc 5 200 mm, W dc 5 200 mm, L sub 5 80 mm, W sub 5 50 mm, L SIW 5 67 mm, W SIW 5 44 mm, d 5 3 mm, p 5 5 mm. [Color figure can be viewed at wileyonlinelibrary.com]ABSTRACT: A K-band differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18lm CMOS process. To accomplish high quality (Q) factor LC-tank at Kband, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is 2109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is 2185.79 dBc/ Hz. At low supply voltage mode of 0.65 V, the phase noise is 2106.015 dBc/Hz at 1 MHz offset and the FoM is 2189.76 dBc/Hz. V C 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:362-366, 2017; View this article online at wileyonlinelibrary.com.

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Section: Introductionmentioning

confidence: 99%