Raman-active modes of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GeSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GeS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></

Jackson, Koblar Alan; Briley, Arlin; Grossman, Shau; Porezag, D.; Pederson, Mark R.

doi:10.1103/physrevb.60.r14985

Cited by 209 publications

(174 citation statements)

References 27 publications

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“…In 200-300 cm -1 , we obtained two peaks located at 220 and 255 cm -1 from the curve fit. One of the vibrational frequencies of the ethane-like unit is located near 255 cm -1 ; 240 cm -1 according to Lucovsky et al [8] and 255 cm -1 according to Jackson et al [12]. In the spectra of c-GeS, there are two intensive peaks at 212 and 238 cm -1 , which are the modes of double layer structure [14].…”

Section: Methodsmentioning

confidence: 94%

“…The vibrational frequency of the ethane-like units is also located near 370 cm -1 [8]. Jackson et al point out from first-principles molecular-dynamics simulations that there are two peaks near 370 cm -1 ; a peak at 373 cm -1 , the mode of the edge-sharing cluster, and a peak at 366 cm -1 , the mode of the ethane-like cluster [12]. Overall, the peak at 370 cm -1 contains two components.…”

Section: Methodsmentioning

confidence: 99%

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Structural development in Ge-rich Ge–S glasses

Sakaguchi

Ténné

Mitkova

2009

Journal of Non-Crystalline Solids

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This is an author-produced, peer-reviewed version of this article. AbstractThe Raman spectra of Ge-S glasses in the Ge-rich region from Ge 33 to 46 % have been investigated in order to know the structural development of the network glasses. From the detailed curve fits, we have found that there is an unassigned peak at 410 cm -1 and it becomes larger with increasing Ge composition. To clarify the structural origin of the peak, we virtually constructed the atomic arrangement of the glassy state starting from the crystalline state through the liquid state and changed the composition gradually depleting the medium in sulfur. From the consideration of the structural modeling and the atomic orbital theory, we suggest that single Ge-S chain is a probable structural origin of the peak.

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Section: Methodsmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Structural development in Ge-rich Ge–S glasses

Sakaguchi

Ténné

Mitkova

2009

Journal of Non-Crystalline Solids

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“…Characteristic peaks appeared at 202 cm -1 , 218 cm -1 , and 255 cm -1 , which correspond to the vibrations of the CS (corner-shared), ES (edge-shared) and Se-Se (Se-Se chains) modes, respectively [20,21]. For the Ge-richest sample, appearance of ETH (ethane) like structures at 168 cm -1 demonstrates a change in the structural organization.…”

Section: Dual Effects Of Photo-darkening and Photo-bleaching In Ge-sementioning

confidence: 97%

Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films

Csarnovics¹,

Latif²,

Nichol³

et al. 2015

JMSE-A

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Photo-induced changes are investigated in thermally evaporated Ge x Se 1-x (x = 0.28, 0.33 and 0.40) films. Object of studies are fresh (as prepared), as well as annealed films. The studies indicated concentration dependence of the occurring effects for the studied compositions. Fast photo-darkening and slow photo-bleaching processes due to laser irradiation were detected in as-prepared films, while only photo-darkening effect was established for annealed samples. The origin of photo-darkening and photo-bleaching is explained based on the structural investigations carried out by Raman spectroscopy.

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“…48 In an alternative explanation, the 435 cm −1 mode has been associated with the highest mode in the ES clusters using ab initio calculations. 49 The bending modes of the tetrahedral units and the Ge-Ge homonuclear bonds form a rather structureless continuum of vibrational modes in the range 200-300 cm −1 . The band associated with Ge-Ge bonds, at ∼230 cm −1 , appears as soon as the Ge content exceeds even slightly the 33.33% stoichiometric level in GeS 2 , and becomes dominant for Ge 40 S 60 .…”

Section: B Micro-raman Spectroscopy -Elucidating Structural Changes mentioning

confidence: 99%

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

et al. 2015

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Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge 40 S 60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Raman-active modes ofa−GeSe2anda−GeS2

Cited by 209 publications

References 27 publications

Structural development in Ge-rich Ge–S glasses

Structural development in Ge-rich Ge–S glasses

Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

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