Raman and conductivity studies of boron doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films

May, Paul; Ludlow, WJ; Hannaway, Matthew; Heard, Peter J; Smith, James A.; Rosser, KN

doi:10.1016/j.cplett.2007.08.018

Cited by 225 publications

(82 citation statements)

References 20 publications

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“…The calculated values underestimate those from SIMS by factors of between 3 and 6. This is in contrast to values for MCD films which are all within a factor of 2 of those measured by SIMS [24]. The difference arises since SIMS counts all the B present in the film, whereas the Raman method only counts those boron atoms which directly affect the 500 cm -1 band.…”

Section: Laser Raman Spectracontrasting

confidence: 46%

“…The values of the boron content in the films are plotted against 4-point conductance (=1/resistance) in Fig.2. The trend is roughly linear, however the conductivity is much less than has been previously observed for B-doped MCD films for the same B content [24,25]. This suggests that the doping efficiency for c-NCD films is greater than for MCD, and this might be explained if a lower proportion of the incorporated B atoms were contributing to doping in c-NCD.…”

Section: Electrical Resultsmentioning

confidence: 58%

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Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

et al. 2007

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We present data showing how the electrical conductivity and Raman spectra of boron doped 'cauliflower'-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ~5×10 20 cm -3 up to ~6 ×10 21 cm -3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm -1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ~5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.

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Section: Laser Raman Spectracontrasting

confidence: 46%

Section: Electrical Resultsmentioning

confidence: 58%

Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

et al. 2007

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“…However, the hydrogen retention in the microcrystalline diamond (MCD) films during the growth of the films can markedly alter the bonding, 5-7 conductivity 8 and field emission 9 of diamond films. The change in electrical properties of MCD films due to heavy ion irradiation will be affected by the hydrogen content in the diamond that results in some ambiguity in radiation detection, as the control of hydrogen content in the diamond films is difficult.…”

Section: Introductionmentioning

confidence: 99%

The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

Chen

Wang

et al. 2013

AIP Advances

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The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (fc = 5.0 × 1012 ions/cm2) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp2-bonded phase (π*-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value

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“…41 Compared with the spectrum of the planar BDD in previous study, the spectra of both the BDDNW and the BDDNW array showed a lower intensity at 1332 cm À1 band, which is attributed to the sp 3 crystalline diamond phase, and a large G peak (1550-1600 cm À1 ), which is attributed to sp 2 amorphous carbon. 42,43 Although the crystalline sp 3 diamond phase portion decreased, the larger crystal population and additional grain boundaries of the BDDNW and the BDDNW array enhanced their electrochemical properties, as measured by their electro-oxidation performance.…”

Section: Physical Characterizationmentioning

confidence: 99%

Boron-doped diamond nanowire array electrode with high mass transfer rates in flow-by operation

et al. 2018

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We fabricated a boron-doped diamond nanowire (BDDNW) array electrode via soft lithography and metalassisted chemical etching (MACE) of Si to provide a highly promoted effective surface area and increased mass transport during the electrochemical oxidation process. The effects of aligning the BDDNW on the electrochemical oxidation performance and the current efficiency of the electrode in phenol oxidation were examined. Although the effective surface area of the BDDNW array with an aligned nanowire configuration was smaller than that of the BDDNW with a random nanowire configuration, the BDDNW array electrode exhibited a higher mass transfer coefficient, resulting in a better performance in the removal of phenol. The enhanced mass transport exhibited by the BDDNW array electrode also greatly enhanced the chemical oxygen demand (COD) and current efficiency. Furthermore, because of its excellent oxidation performance, the BDDNW array electrode also exhibited much lower energy consumption during the phenol oxidation process.

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Raman and conductivity studies of boron doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films

Cited by 225 publications

References 20 publications

Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

Boron-doped diamond nanowire array electrode with high mass transfer rates in flow-by operation

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