Raman and infrared spectra of amorphous semiconductors (GeS2)1-x(Bi2S3)x systems

Optical Properties of the Amorphous Semiconductor (GeS 2 ) 1—x (Bi 2 S 3 ) x System under High Pressure

“…Amorphous bulk samples in this system are available up to x = 0.6 by the melt-quenching method. Raman and infrared spectra of the amorphous (GeS 2 ) 1Àx (Bi 2 S 3 ) x system have shown that tetrahedron-type and pyramid-type molecular models apply for GeS 2 and for BiS 3 , respectively, for concentrations less than x = 0.1, but do not apply for concentrations larger than x = 0.2 [2]. Amorphous GeS 2 has been well studied [3,4], however, the optical properties of the amorphous (GeS 2 ) 1Àx (Bi 2 S 3 ) x system under pressure have not yet been reported.…”