Raman and infrared spectroscopy studies of carbon nitride films prepared on Si (100) substrates by ion beam assisted deposition

Abstract

Filmes de nitreto de carbono, preparados por deposição assistida por feixe de íons, foram estudados pela espectroscopia de Raman e infravermelho, em função de energia de íons (200, 400, e 600 eV) e razão de chegada de íon a átomo R(I/A) de 0,9 a 2,5. A razão de composição N/C no filme, determinada por análise de detecção de recuo elástico, foi encontrada proporcional a R(I/A); porém, a formação de filme é possível somente se R(I/A) for menor do que um valor crítico da eficiência de "sputtering" químico. Esse valor encontrado foi de 0,21. O valor máximo de N/C obtido foi de 0,9 (47% atômica de nitrogênio) para o filme depositado com 400 eV. Para entender o efeito de incorporação de nitrogênio na estrutura dos filmes, os parâmetros foram determinados pela análise dos espectros Raman e encontrados fortes dependências da quantidade de nitrogênio nos filmes; os comportamentos da posição e da largura do pico G, e da razão I D /I G são correlacionados com as mudanças estruturais nos filmes.Carbon nitride films prepared by ion beam assisted deposition were studied by Raman and infrared spectroscopy, as a function of nitrogen ion energy (200, 400, and 600 eV) and the ion to atom arrival rate ratio R(I/A) ranging from 0.9 to 2.5. The composition ratio N/C in the film determined by elastic recoil detection analysis was found to be proportional to R(I/A); however, the film growth is possible only if R(I/A) is smaller than a critical value of chemical sputtering yield. This value was found to be 0.21. The maximum value of N/C obtained was 0.9 (47 at.% of nitrogen) for the film deposited with ion energy of 400 eV. In order to understand the effect of nitrogen incorporation on the structure of the films, the parameters were determined from the Raman spectra analysis of the films and found to show strong dependences of the nitrogen content in the films; the behaviors of the G peak position and width, and I D /I G ratio are correlated with the structure changes in the films.

Deposition of hard and adherent TiBCN films for cutting tools applications

“…The peak centered at 2013 cm −1 corresponds to the stretching vibration of the triple bonding between carbon and nitrogen (CN). Hu et al 26, Escobar−Alarco et al 27, and Sucasaire et al 28 found similar results by their infrared spectroscopy analyses of amorphous carbon nitride. Peaks of amorphous BN phases are not observed in this FTIR study.…”

A Comparative Study on the Role of Precursors of Graphitic Carbon Nitrides for the Photocatalytic Degradation of Direct Red 81

“…2. The broad peaks at 3100-3300 cm -1 can be assigned to the stretching modes of N-H bonds in NH and NH 2 configurations and to hydroxyl group -OH which may incorporate after exposing to air [27]. The strong bands at 1200-1650 cm -1 are attributed to the stretching vibration modes of C-N heterocycles [12,28].…”

Influence of ultra-micropore volume of activated carbons prepared from noble mung bean on the adsorption properties of CO2, CH4, and N2

“…As shown in the figure, in the prepared samples, two peaks appear broadly centered at 1370 and 1595 cm À1 , representing the D and G bands. 32,33 Here, the D-band is associated with defective and disordered carbon, while the G-band is associated with the ideal graphite lattice of carbon. The degree of graphitization of the samples can be expressed as the relative intensity ratio (I D / I G ) of these two peaks.…”