Raman and X-ray photoelectron spectroscopic investigation of solution processed Alq3/ZnO hybrid thin films

Dasi, Gnyaneshwar; Lavanya, Thyda; Suneetha, S.; Vijayakumar, S.; Shim, Jae‐Jin; Thangaraju, K.

doi:10.1016/j.saa.2021.120377

Cited by 21 publications

(6 citation statements)

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“…The Raman spectroscopy data indicate the predominance of a wurtzite structure, and the presence of a relatively good c-axis orientation on the substrate. Furthermore, the E 1 (LO) shoulder is an indicator of defects like zinc interstitials and oxygen vacancies [ 38 ]. The fact that it is relatively low indicates a fairly low number of defects in the ZnO thin film.…”

Section: Methodsmentioning

confidence: 99%

“…This effect is most pronounced at the 20% etchant concentration. This indicates an increase in the number of defects, such as zinc interstitials and oxygen vacancies in the ZnO film [ 38 ].…”

Section: Methodsmentioning

confidence: 99%

“…The Raman spectra of the ZnO films after being etched using four different etchant concentrations are presented in figure 3. A strong E2High peak indicates a strong wurtzite structure with preferred c-axis orientation and a strong A 1 (LO) peak indicates a good c-axis orientation [38]. The absence of all TO modes would indicate even stronger c-axis orientation [39].…”

Section: Methodsmentioning

confidence: 99%

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A statistical method to optimize the chemical etching process of zinc oxide thin films

et al. 2022

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Zinc oxide (ZnO) is an attractive material for microscale and nanoscale devices. Its desirable semiconductor, piezoelectric and optical properties make it useful in applications ranging from microphones to missile warning systems to biometric sensors. This work introduces a demonstration of blending statistics and chemical etching of thin films to identify the dominant factors and interaction between factors, and develop statistically enhanced models on etch rate and selectivity of c-axis-oriented nanocrystalline ZnO thin films. Over other mineral acids, ammonium chloride (NH 4 Cl) solutions have commonly been used to wet etch microscale ZnO devices because of their controllable etch rate and near-linear behaviour. Etchant concentration and temperature were found to have a significant effect on etch rate. Moreover, this is the first demonstration that has identified multi-factor interactions between temperature and concentration, and between temperature and agitation. A linear model was developed relating etch rate and its variance against these significant factors and multi-factor interactions. An average selectivity of 73 : 1 was measured with none of the experimental factors having a significant effect on the selectivity. This statistical study captures the significant variance observed by other researchers. Furthermore, it enables statistically enhanced microfabrication processes for other materials.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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A statistical method to optimize the chemical etching process of zinc oxide thin films

et al. 2022

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“…In general, organometallics can be easily doped with metals, metal oxides or carbonaceous materials producing nanocomposite with promising aspects [6,7]. Dasi et al (2022) have prepared Alq 3 /ZnO thin film by sol-gel spin coating for improving the physical properties of the nanocomposite [8].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Alq₃ by a facile co-precipitation approach and study the impact of CNTs support on its microstructure and electronic characteristics for photodiode development

Siddiq

2023

Mater. Res. Express

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The global demand for renewable energy as an alternative to traditional fossil fuels has motivated the scientific community to develop highly efficient nanocomposite materials that can be used for enhancement to optoelectronic technology. In the present work, organometallics Alq3 and Alq3/CNTs were prepared by cost-effective chemical route. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to identify the structural and morphological features. The hybrid Alq3/CNTs exhibited polycrystalline structure with a large surface area. The optical band gap (E_g) of Alq3 film was evaluated within the visible spectrum in the range of 3.047 eV which reduced to 2.979 eV by CNTs integration. Ag/Alq3/p-Si/Al and Ag/Alq3/CNTs/p-Si/Al photodiodes were fabricated using thermal evaporating technique. Current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) were measured to analyze the photodiode behavior. The main electronic parameters like R_s,n,ϕ_b 〖and I〗_o were determined using different models indicating that the composite photodiode of high performance in which R_s was decreased whereas N_a was increased with doping. Besides, the photocurrent sensitivity was increased from 1.45×〖10〗^(-8) A to 1.1 ×〖10〗^(-5) A due to increase of free charge carriers.

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“…Raman spectroscopy has been widely used for decades to determine vibrational spectra of molecular systems and bulk crystals. Over the last decade, this experimental technique has also been actively used for probing the nanoscale structures such as thin films [19], nanofiberrs and nanowires [20,21], quantum dots [22], nanoparticles [23]. In context of nanocomposite materials, Raman scattering is a very efficient method for structural identification and characterization of nanocrystals confined into nanochannels of host inorganic matrices.…”

Section: Introductionmentioning

confidence: 99%

On the Issue of Textured Crystallization of Ba(NO$_3$)$_2$ in Mesoporous SiO$_2$: Raman Spectroscopy and Lattice Dynamics Analysis

Shchur,

Beltramo,

Andrushchak

et al. 2022

Preprint

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The lattice dynamics of preferentially aligned nanocrystals formed upon drying of aqueous Ba(NO3)2 solutions in a mesoporous silica glass traversed by tubular pores of approximately 12 nm are explored by Raman scattering. To interpret the experiments on the confined nanocrystals polarized Raman spectra of bulk single crystals and X-ray diffraction experiments are also performed. Since a cubic symmetry is inherent to Ba(NO3)2, a special Raman scattering geometry was utilized to separate the phonon modes of Ag and Eg species. Combining group-theory analysis and ab initio lattice dynamics calculations a full interpretation of all Raman lines of the bulk single crystal is achieved. Apart from a small confinement-induced line broadening, the peak positions and normalized peak intensities of the Raman spectra of the nanoconfined and macroscopic crystals are identical. Interestingly, the Raman scattering experiment indicates the existence of comparatively large, ∼10-20 µm, single-crystalline regions of Ba(NO3)2 embedded in the porous host, near three orders of magnitude larger than the average size of single nanopores. This is contrast to the initial assumption of non-interconnected pores. It rather indicates an inter-pore propagation of the crystallization front, presumably via microporosity in the pore walls.

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Raman and X-ray photoelectron spectroscopic investigation of solution processed Alq3/ZnO hybrid thin films

Cited by 21 publications

References 50 publications

A statistical method to optimize the chemical etching process of zinc oxide thin films

A statistical method to optimize the chemical etching process of zinc oxide thin films

Synthesis of Alq₃ by a facile co-precipitation approach and study the impact of CNTs support on its microstructure and electronic characteristics for photodiode development

On the Issue of Textured Crystallization of Ba(NO$_3$)$_2$ in Mesoporous SiO$_2$: Raman Spectroscopy and Lattice Dynamics Analysis

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Raman and X-ray photoelectron spectroscopic investigation of solution processed Alq3/ZnO hybrid thin films

Cited by 21 publications

References 50 publications

A statistical method to optimize the chemical etching process of zinc oxide thin films

A statistical method to optimize the chemical etching process of zinc oxide thin films

Synthesis of Alq3 by a facile co-precipitation approach and study the impact of CNTs support on its microstructure and electronic characteristics for photodiode development

On the Issue of Textured Crystallization of Ba(NO$_3$)$_2$ in Mesoporous SiO$_2$: Raman Spectroscopy and Lattice Dynamics Analysis

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Synthesis of Alq₃ by a facile co-precipitation approach and study the impact of CNTs support on its microstructure and electronic characteristics for photodiode development