Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures

Abstract

Raman scattering measurements on (MnTe)8 /(Cd 0.64 Ζn 0.30Τc)8 multilayer grown by MBE method and on various (MnTe)n/(CdTe)ι2 multilayers (where n = 8,12,16, 24) were performed at low temperatures. In the The objective of this work is to analyse the Raman scattering in superlattices (multilayers) involving thin films of a magnetic semiconductor separated by a non-magnetic spacer. Zinc-blende MnTe (which in a bulk form possesses a long-range antiferromagnetic order of the AF-III type, see, e.g., [1]) was selected as a suitable material for the magnetically active component. As the non-magnetic spacers, thin layers of CdTe were used. The lattice parameter values for both compounds do not differ too much (the lattice mismatch is close to above 2%) so the strain effects are expected to be insignificaut.Recently, it was demonstrated that the Raman scattering is a very effective tool for investigation of magnetic excitations (magnons) in thick, MBE-grown MnTe [2]. In order to make the Raman scattering intensity measurable, we used multilayers with thin MnTe layers having a constant thickness separated by 12 monolayers of nonmagnetic CdTe. Thus according to the recent neutron scattering *This work has been partially supported by PB750/T0S/95/09 grant from the Committee for Scientiflc Research (Poland). †Permanent address: