Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

Abstract

Whereas p type semiconducting diamond is well‐developed with boron doping, it is still challenge to directly determine boron content within type IIb diamonds in material science. In this work, we show a systematic study on analysis of electronic Raman effect in boron‐doped diamond (BDD) containing boron ranging from several to ~104 ppm. Beside a sharp peak near 5.2 cm−1, a shoulder associated with the Raman electronic effect near 12.1 cm−1 presents in the BDD samples and the intensity is observed to increase significantly with the increasing boron content. Our results demonstrate that the electronic line can be employed as an effective indication for simple, non‐destructive, accurate and broadly applicable boron calibration in semiconducting BDD samples.

The structure and multifunctionality of high-boron transition metal borides *

“…The exploration of hard materials with excellent physical and chemical properties [1] is of great significance for the study of condensed matter physics and the development of materials science [1][2][3][4][5]. Traditional superhard materials are usually investigated in the boron-carbon-nitrogen-oxygen (B-C-N-O) system such as diamond and cubic BN due to the 3-dimensional (3D) cubic structure built by inner short and strong covalent bonds.…”