Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

Abstract

Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6H-SiC substrates by a new method of solid gas phase epitaxy. During the growth characteristic voids are formed in Si at the SiC/Si interface. Raman peak position, intensity and linewidth were used to characterize the quality and the polytype structure of the SiC layers. A large enhancement in the peak intensity of the transverse optical and longitudinal optical phonon modes of SiC is observed for the Raman signal measured at the voids. In addition, scanning electron microscopy and atomic force microscopy were used to investigate the surface morphology of SiC layers.

Combined reactive/non-reactive DC magnetron sputtering of high temperature composite AlN–TiB2–TiSi2

“…These indicate that the Al atoms occupy titanium sites due to the fact that Al and Ti have similar atomic radii forming a (Ti, Al)(N, O) solid solution. The peak at 768 cm −1 can be attributed to TO phonon mode of Si-C that is in agreement with previously published data [36]. …”

Excimer laser crystallization of a-SiCx on glass

“…This is characteristic for nanocrystalline graphite with a low amount of sp 3 -bondings [11]. Figure 4 shows AFM micrographs of a c-SiC 0.53 region with a triangular grain structure similar to those observed by Wasyluk [12,13]. This is indicative of grains with an average grain size of 60-80 nm and a z-range of 20 nm.…”

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

“…The Raman peaks at 941 and 978 cm −1 corresponds to SiC. 30,31 We also observed weak Raman signals at 1205, 1344, 1366, and 1435 cm −1 in the 15, 30, and 45 min deposition, as shown in Fig. 3.…”