Raman investigation of layered ZrGeTe4 semiconductor

Abstract

This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.

Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe4 nanoribbon

“…According to the calculation of the phonons at the Г point, [33][34][35] there are four Raman active vibrational modes for ZrGeTe 4 : A 1 , A 2 , B 1 , and B 2 modes. 36 In our work, eight Raman peaks were detected at 58, 78, 87, 94, 119, 176, 221, and 243 cm À1 , respectively. The Raman peaks located at 58, 87, 94, 119, 176, 221, and 243 cm À1 belong to the A 1 mode, which is associated with stretching vibrations of Zr-Zr and Zr-Te bonds; the Raman peak at 78 cm À1 belongs to the A 2 mode associated with twisting vibrations.…”

“…The angularly resolved Raman spectra of the as‐prepared ZrGeTe 4 under unpolarized, cross, and parallel configurations at 532 nm are shown in Figure 1F. According to the calculation of the phonons at the Г point, 33–35 there are four Raman active vibrational modes for ZrGeTe 4 : A 1 , A 2 , B 1 , and B 2 modes 36 . In our work, eight Raman peaks were detected at 58, 78, 87, 94, 119, 176, 221, and 243 cm −1 , respectively.…”

Experimental Observation of Pressure-Induced Superconductivity in Layered Transition-Metal Chalcogenides (Zr,Hf)GeTe4 Explored by a Data-Driven Approach

“…53 The two minor components (Peak 3 at 183.0 eV and Peak 4 at 180.6 eV) originate from the Zr 2+ state because an energy shift of 2.1 eV between Zr 4+ and Zr 2+ was reported in a previous study. 53 Figure 4b shows the Hf 4f core-level spectrum of HfGeTe 4 , which also exhibited two valence states. Peak 1 at 19.3 eV and Peak 2 at 17.7 eV correspond to the Hf 4+ valence state with a spin−orbit splitting of 1.6 eV, and Peak 3 at 17.6 eV and Peak 4 at 16.1 eV are from the Hf 2+ state.…”

“…The two main components (Peak 1 at 185.1 eV and Peak 2 at 182.7 eV) correspond to the Zr 4+ valence state with a spin−orbit splitting of 2.4 eV. 53 The two minor components (Peak 3 at 183.0 eV and Peak 4 at 180.6 eV) originate from the Zr 2+ state because an energy shift of 2.1 eV between Zr 4+ and Zr 2+ was reported in a previous study. 53 Figure 4b shows the Hf 4f core-level spectrum of HfGeTe 4 , which also exhibited two valence states.…”

“…The anisotropic structure is constructed by one dimensional chain-like structures with trigonal prisms. According to a precise Raman spectroscopy investigation, ZrGeTe4 exhibits highly in-plane anisotropic two-dimensional feature, suggesting its potential application in nano-electronic devices[42].…”