Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si_1-xGe_x:C

Abstract

The localized vibrational mode (LVM) of carbon in strain-relaxed Si 1−x Ge x :C samples with x = 0, 0.05, 0.35, and 0.5 have been investigated by Raman spectroscopy at room-and liquid-nitrogen-temperatures. The position of the Raman peaks due to LVM of carbon shifts linearly to lower frequencies with increasing x from 0 to 0.5. The LVM frequencies of carbon obtained by Raman measurement agree very well with those determined by Hoffmann et al. in infrared (IR) absorption recently.