Raman phonon piezospectroscopy in GaAs: Infrared measurements

Wickboldt, P.; Anastassakis, E.; Sauer, R.; Cardona, M.

doi:10.1103/physrevb.35.1362

Cited by 134 publications

(57 citation statements)

References 15 publications

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“…Moreover, the inhomogeneous strain field in the QD splits the phonon modes by ϳ0.4 meV and gives rise to additional broadening by ϳ0.1 meV. 37,38 It is worth to mention that some replicas exhibit resolved shoulders or double peaks ͓e.g., for of X − in QD1 shown in Fig. 2͑a͔͒, which can be interpreted as a strain-induced splitting of the phonon modes.…”

Section: Resultsmentioning

confidence: 99%

Phonon replicas of charged and neutral exciton complexes in single quantum dots

et al. 2010

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The longitudinal-optical ͑LO͒-phonon coupling is experimentally examined by the optical decay of various charged and neutral exciton species in single quantum dots, and the related Huang-Rhys parameters are extracted. A positive trion exhibits significantly weaker LO-phonon replicas in the photoluminescence spectrum than the neutral and negatively charged species. Model computations show that the strength of the replicas is determined by the Coulomb interactions between electrons and holes, which modify the localization of the envelope wave functions and the net charge distribution.

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Section: Resultsmentioning

confidence: 99%

Phonon replicas of charged and neutral exciton complexes in single quantum dots

et al. 2010

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“…(a) (b) [20] and the phonon deformation potentials K ij for Si [17] and for GaAs [18]. while for the biaxial stress in the (111) plane we get for Si…”

Section: Determination Of Strain Through Raman Scatteringmentioning

confidence: 99%

“…The dimensionless phonon deformation potentials K 11 , K 12 , and K 44 have been determined for Si and for GaAs applying uniaxial stress in different crystallographic directions (most reliable values can be found in [17] and [18], respectively). These parameters determine the shift of the phonon frequencies for an arbitrary deformation of the crystal.…”

Section: Determination Of Strain Through Raman Scatteringmentioning

confidence: 99%

A method for applying biaxial stress to solids

Trzeciakowski¹,

Strzeszewski

Gȩbicki

et al. 2008

Physica Status Solidi (b)

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Large deformations of materials are achieved by applying gas pressure to thin circular plates. The deflections of the plates are measured using a laser profilometer and the strain in the centre of the plates is determined from the radius of curvature and verified by Raman scattering. The results for Si(100), Si(111) and GaAs(111) are compared with the classical theory for thin plates. The relationship between the applied pressure and the strain in the centre of the plates is simple in the case when the deflection is less than the thickness. For deflections comparable to or exceeding the thickness it is best to perform the measurements on both sides of the plate and look at the differences between them. The method should be useful for determining electron or phonon deformation potentials or for studying biaxial strain effects in one sample. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Since the pioneering work on Si [1] there have been many measurements of PDP in practically all available semiconductor materials [2][3][4][5][6]. A combination of two PDP yields the socalled Gruneisen parameter determining the phonon shifts due to hydrostatic pressure.…”

Section: Introductionmentioning

confidence: 99%

Phonon Deformation Potentials from Raman Measurements on Semiconductor Membranes

1997

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It is shown that the phonon deformation potentials in semiconductors can be determined by Raman scattering on hydrostatically and biaxially deformed samples. The complete data includes biaxial deformation in the (100), (111), and (110) planes. Biaxial strain is applied to the sample using the recently developed membrane method. The phonon displacement under biaxial strain can be directly obtained from Raman measurements on a single membrane provided we determine the strain from the splitting of the band gap using e.g. the photoreflectance technique. Alternatively, the ratios of different phonon shifts can supply the necessary information. The method is illustrated with experimental results for GaP.

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Raman phonon piezospectroscopy in GaAs: Infrared measurements

Cited by 134 publications

References 15 publications

Phonon replicas of charged and neutral exciton complexes in single quantum dots

Phonon replicas of charged and neutral exciton complexes in single quantum dots

A method for applying biaxial stress to solids

Phonon Deformation Potentials from Raman Measurements on Semiconductor Membranes

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