Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Nguyen, Thanh Nga; Nguyen, Van Duy; Jung, Sungwook; Yi, Junsin

doi:10.1016/j.apsusc.2009.05.087

Cited by 20 publications

(8 citation statements)

References 28 publications

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“…Consistently, we observed a gradual decrease in FWHM of the crystalline Si peak from w9.0 to 5.4 cm À1 with the increase in T f . The reduction in FWHM of the crystalline Si peak is correlated to the improvement in crystalline quality to form less defect or defectfree structures [46]. This agreed well with the XRD analysis as mentioned earlier.…”

Section: Micro-raman Analysissupporting

confidence: 71%

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Chong

Goh

Dee

et al. 2012

Materials Chemistry and Physics

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Section: Micro-raman Analysissupporting

confidence: 71%

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Chong

Goh

Dee

et al. 2012

Materials Chemistry and Physics

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“…It is important to recognize that the changes in lattice parameters could result directly from the annealing process. Indeed, annealing (commonly defined as "heating and allowing to cool slowly, in order to remove internal stress") is well known to increase crystallinity independent of organic matter (Choi et al, 1999;Nasdala et al, 2001;Nguyen et al, 2009). …”

Section: Insights From Annealing Experimentsmentioning

confidence: 99%

The Origin and Role of Organic Matrix in Coral Calcification: Insights From Comparing Coral Skeleton and Abiogenic Aragonite

DeCarlo¹,

Ren²,

Farfán³

2018

Front. Mar. Sci.

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Understanding the mechanisms of coral calcification is critical for accurately projecting coral reef futures under ocean acidification and warming. Recent suggestions that calcification is primarily controlled by organic molecules and the biological activity of the coral polyp imply that ocean acidification may not affect skeletal accretion. The basis for these suggestions relies heavily on correlating the presence of organic matter with the orientation and disorder of aragonite crystals in the skeleton, carrying the assumption that organic matter observed in the skeleton was produced by the polyp to control calcification. Here we use Raman spectroscopy to test whether there are differences in organic matter content between coral skeleton and abiogenic aragonites precipitated from seawater, both before and after thermal annealing (heating). We measured the background fluorescence and intensity of C-H bonding signals in the Raman spectra, which are commonly attributed to coral polyp-derived skeletal organic matrix (SOM) and have been used to map its distribution. Surprisingly, we found no differences in either fluorescence or C-H bonding between abiogenic aragonite and coral skeleton. Annealing reduced the molecular disorder in coral skeleton, potentially due to removal of organic matter, but the same effect was also observed in the abiogenic aragonites. The presence of organic molecules in the abiogenic aragonites is further supported by measurements of N content and δ 15 N. Together, our data suggest that some of what has been interpreted in previous studies as polyp-derived SOM may actually be seawater-sourced organic matter or some other signal not unique to biogenic aragonite. Finally, we create a high-resolution Raman map of a Pocillopora skeleton to demonstrate how patterns of fluorescence and elevated calcifying fluid aragonite saturation state ( Ar ) along centers of calcification are consistent with both biological and physico-chemical controls. Our aim is to advance discussion on biological mediation of calcification and the implications for coral resilience in a high-CO 2 world.

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“…This fwhm is also related to the concentration of Ni silicide trapped at the grain boundaries so that it can be concluded that SILC shows the lowest defect concentration among these polycrystallines. 23 To observe the surfaces of MILC and SILC poly-Si samples using FESEM, samples were Secco etched after crystallization annealing at 550 • C for 4 h. It is known that Secco etchant can etch α-Si and Ni silicide from crystalline Si selectively. 24 In Fig.…”

Section: Resultsmentioning

confidence: 99%

Improvement of Electrical Performance of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors

Byun

Son

Lee

et al. 2012

J. Electrochem. Soc.

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In this study, we present a new method named seed-induced lateral crystallization (SILC), wherein the Ni that is deposited on amorphous silicon (a-Si) is removed prior to crystallization. The newly developed polycrystalline silicon (poly-Si) thin-film transistor (TFT) exhibits a field effect mobility of 63 cm 2 /V-s, leakage current of 7.9 × 10 −11 A, slope of 0.8 V/dec, I on of 2.8 × 10 −4 A at V D = 10 V, and V TH of 5.5 V. The leakage current has been reduced by an order of magnitude as compared with conventional metal-induced lateral crystallized (MILC) poly-Si TFTs, in which Ni is removed after the crystallization. In order to materials analysis, Raman scattering spectroscopy and field emission scanning electron microscopy (FESEM) was used. Since a batch process is possible in MILC technology, it is more advantageous than the excimer laser annealing (ELA) technology for mass production of a large size display. Since SILC TFT shows a leakage current comparable to an ELA poly-Si TFT, its application to the mass production of AMOLED display is expected have a substantial impact on the industry. Active matrix organic light emitting diode (AMOLED) technology has many advantages over liquid crystal display (LCD) in terms of display functions and is, therefore, beginning to replace LCD technology. Because AMOLED requires low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs), for which no industrial technology is yet known, very limited and only small size display is available so far. The excimer laser annealing (ELA) is a typical low-temperature crystallization method but suffers from two critical problems, which have not yet been overcome in terms of cost for mass production. One is the inevitable scan overlap, which leads to crystal non-uniformity; the other is the resulting surface roughness, which stems from a liquid-solid phase transformation.

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Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Cited by 20 publications

References 28 publications

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique

The Origin and Role of Organic Matrix in Coral Calcification: Insights From Comparing Coral Skeleton and Abiogenic Aragonite

Improvement of Electrical Performance of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors

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