Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films

Nesheva, D.; Raptis, Constantine A.; Perakis, A.; Bineva, I.; Aneva, Z.; Levi, Z.; Alexandrova, S.; Hofmeister, H.

doi:10.1063/1.1504176

Cited by 186 publications

(142 citation statements)

References 37 publications

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“…7 Much work is being done on the electroluminescence properties of these nc-Si embedded in a SiO 2 matrix. 8,9 This is an interesting issue due to its potential optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Andrés

Prado

Mártil

et al. 2003

Journal of Applied Physics

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The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiO x H y thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH 4 and O 2 as precursor gases. The film composition was measured by heavy ion elastic recoil detection analysis and energy dispersive x-ray spectroscopy. Suboxide films with compositions ranging from SiO 2 to SiH 0.38 were obtained. Infrared spectroscopy showed the presence of different Si-O and Si-H vibration modes. The usual estimation of the oxygen to silicon ratio by the wave number of the Si-O-Si stretching band was not accurate for films far from stoichiometry. These off-stoichiometric films also showed a broader Si-O-Si stretching peak than the stoichiometric ones, indicating a higher bonding disorder. The position of the Si-O-Si bending and rocking modes did not depend on the film composition. On the other hand, the peak position of the Si-H modes were found strongly dependent on the Si environment. By single-wavelength ellipsometry at ϭ632.8 nm the refractive index n was found to range between 1.45 (SiO 2 ) and 2.04 (SiO 0.06 H 0.36 ). Electron spin resonance measurements showed that stoichiometric films presented the well known EЈ center ("SiϵO 3 ) with concentrations in the 10 16 -10 17 cm Ϫ3 range, while for Si-rich films (xӶ1) the Si dangling bond center (Si DB , "SiϵSi 3 ) was the only detectable defect, with concentrations in the 10 18 -10 19 cm Ϫ3 range. In near-stoichiometric films both EЈ and Si DB centers were found.

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Section: Introductionmentioning

confidence: 99%

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Andrés

Prado

Mártil

et al. 2003

Journal of Applied Physics

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“…The peak at 520 cm À1 was attributed to the Si substrate, and that at 665 cm À1 to the ZTO phase. 27,34,37 No Raman modes of other phases such as ZnO, SnO 2 or SnO were observed. Samples were of a highly pure single phase.…”

Section: Resultsmentioning

confidence: 99%

Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires

Deng

Zhou

et al. 2013

Journal of Applied Physics

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“…A spectral shift of PL peaks to shorter wavelengths in obliquely deposited samples in comparison with normally deposited ones can be caused by decrease in nc-Si dimensions. The size of nc-Si in these systems depends on the silicon content in deposited SiO x layers [13]: decrease in the Si content (i.e., increase of x) results in decreased nc-Si sizes and blue shift of PL spectrum. Besides, during hightemperature annealing of porous films with column-like structure the thermally stimulated formation of nc-Si occurs in a restricted volume of the SiO x columns.…”

Section: Methodsmentioning

confidence: 99%

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Michailovska¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiO x /Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiO x /Ni/Si samples is essentially higher than that in reference SiO x /Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiO x /Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8. for SiO x /Si specimens to 2.8610 4 s -1 for SiO x /Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiO x /Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples.

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Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films

Cited by 186 publications

References 37 publications

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Experimental and first-principles study of ferromagnetism in Mn-doped zinc stannate nanowires

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

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