Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

Abstract

We have converted the surface of undoped ZnO bulk into the As-doped p-ZnO layer by means of the As ion implantation method. After postimplantation annealing, the As-related properties were investigated by using Raman scattering and photoluminescence (PL) experiments. The Raman spectrum shows that the E2high peak obtained from the As-doped p-ZnO shifted toward the higher energy side of 0.55 cm−1 in comparison with that of the undoped ZnO bulk. This result is related to the stress increment of the sample surface due to the As implantation. After the As-implanted p-ZnO annealed at 800 °C, the PL spectroscopy reveals the neutral acceptor bound exciton emission (A∘,X) at 3.3589 eV. This emission shows a tendency to quench the intensity and extend the emission linewidth with increasing temperatures. Also, two As-related peaks associating with recombination emissions between free electrons and acceptor holes were observed at 3.3159 and 3.2364 eV. In addition, the I–V characteristic curves of the p–n homojunction fabricated with the As ion implantation method clearly have shown the behavior of the diode.

Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

“…5 that how Cu-doping influence the E 2 (high) mode of ZnO. The E 2 (high) is known to be the band characteristic of the wurtzite phase [26]. As can be seen in Fig.…”

Studies of the optoelectronic properties of ZnO thin films

“…Recently, the report on the stimulated emission from optically pumped ZnO polycrystalline thin films at room temperature 8,9 has attracted considerable attention to the studies of optoelectronic properties of ZnO films. There are several reports on the studies of photoluminescence (PL) [10][11][12][13][14][15][16] and photoconductivity (PC) properties of ZnO films, [17][18][19][20][21][22] which are mainly focused either on the emission or on the UV photoresponse properties. It has been found that factors such as film thickness and grain size, 23 crystallographic orientation, 24 postdeposition annealing temperature and ambient, 19 doping effect with nitrogen, 25 presence of micropores, 23 and encapsulating layer 19 influence the emissions as well as photoresponse characteristics of ZnO.…”

Crystallinity-damage recovery and optical property of As-implanted Zno crystals by post-implantation annealing

“…The observation of these As-related emissions means that the surface of the undoped ZnO was converted into the As-doped p-type ZnO layer by the As ion implantation process. In addition, by the measuring current-voltage characteristic curve, we verified that the interface between implanted surface and substrate was made up of the p-n junction [11].…”