Raman Scattering Characterization of Ion‐Beam Synthesized Mg₂Si, 1

Abstract

Summary: The unpolarized Raman scattering spectra of ion beam synthesized Mg2Si phase, embedded in (100) Si matrix are studied. We used two different doses for the Mg ions, 4 × 1017 cm−2 and 8 × 1017 cm−2, each of them with two different energies 40 keV and 60 keV, which were implanted into (100) Si substrates. After implantation, the samples were subjected to rapid thermal annealing for different durations. The samples' surfaces were studied by scanning electron microscopy (SEM). On the basis of the Raman spectra behavior, conclusions were drawn about the influence of the technological parameters on the formation of the Mg2Si phase.SEM microphotographs of samples produced with an ion dose of 8 × 1017 cm−2, an ion energy of 40 keV, and annealed for 60 s.imageSEM microphotographs of samples produced with an ion dose of 8 × 1017 cm−2, an ion energy of 40 keV, and annealed for 60 s.

Influences of Nd doping on preparing Mg 2 Si semiconductor thin films by thermal evaporation

“…5 shows the Raman spectrum of the Mg 2 Si and Mg 2−x Nd x Si thin film sample deposited by thermal evaporation at 400°C for 4 h. As shown in Fig. 5, the two thin film samples had two Raman characteristic peaks near 256 and 690 cm −1 , which were consistent with the position of Raman characteristic peak of Mg 2 Si [23,24]. The Raman characteristic peaks of the two samples near 256 cm −1 presented higher intensity, but the peak of the Mg 2−x Nd x Si thin film sample near 256 and 690 cm −1 showed lower intensity than that of the Mg 2 Si sample, which might be explained by Nd dopant leading to small size of grains.…”

The role of Mg2Si formation in the hydrogenation of Mg film and Mg nanoblade array on Si substrates

“…5 shows the representative Raman spectra of the hydrogenated Mg film (A350) and Mg nanoblades (B350), in the wavenumber range of 100-1600 cm −1 . Both samples have four common Raman peaks: three peaks are centered at 312 cm −1 , 954 cm −1 , and 1279 cm −1 , respectively, corresponding to the characteristic vibration modes, B 1g , E g , and A 1g , of tetragonal MgH 2 [29,37]; another peak is located at 257 cm −1 , which is ascribed to the F 2g mode of cubic structured Mg 2 Si [38]. The extremely strong and sharp Raman peak at 521 cm −1 in sample B350 is from the Si substrate.…”

Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

“…The theoretical calculations give for the frequency of the triply degenerate Raman-allowed F 2g mode the value 258 cm induced scattering by the Raman-inactive F 1u (LO)-mode, is usually observed at 345-348 cm −1 in the Raman spectra of Mg 2 Si [7][8][9][10]. Thus, the peaks at 256 and 345 cm −1 , observed in our experimental spectra, are related to the F 2g and the F 1u (LO) modes of the Mg 2 Si.…”