Raman scattering from ZnTe-ZnSe strained-layer superlattices

Nakashima, Seiji; Nakakura, Y.; Fujiyasu, H.; Mochizuki, K.

doi:10.1063/1.96567

Cited by 42 publications

(9 citation statements)

References 12 publications

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“…8 Multilayer coatings of TiAlN / TiN combine properties of both TiN and TiAlN, and exhibit higher oxidation resistance and wear resistance. [8][9][10][11] Raman spectroscopy has been widely used in the field of composition-modulated semiconductor and amorphous superlattices to study the interface structure, [12][13][14][15][16][17][18] strain, [19][20][21][22] and structural stability. 23 Raman scattering has also been used to study the quantum wire structures.…”

Section: Introductionmentioning

confidence: 99%

A Raman-scattering study on the interface structure of nanolayered TiAlN∕TiN and TiN∕NbN multilayer thin films grown by reactive dc magnetron sputtering

Barshilia

Rajam

2005

Journal of Applied Physics

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Nanolayered multilayer coatings of TiAlN / TiN and TiN / NbN were deposited on Si ͑100͒ substrates at various modulation wavelengths ͑i.e., bilayer thickness, ⌳͒ using a reactive dc magnetron sputtering system. These coatings were characterized using micro-Raman spectroscopy to study the effect of interfaces on the optical-phonon modes. For TiAlN / TiN multilayers, the optical-phonon band shifts to higher frequencies with a decrease in the modulation wavelength. Furthermore, the optical-phonon band shifts to higher frequencies with an increase in the substrate temperature for TiAlN / TiN multilayers deposited at ⌳ = 80 Å. No such shift was observed for single-layer TiN and TiN / NbN multilayer coatings. This observed shift has been attributed to interdiffusion between the layers during deposition, which is more for TiAlN / TiN multilayers as compared to TiN / NbN multilayers. The x-ray-diffraction data showed well-defined satellite reflections for TiN / NbN multilayers at low modulation wavelengths and very weak satellite reflections for TiAlN / TiN multilayers, indicating that interfaces were very broad for TiAlN / TiN multilayers. The nanoindentation data showed no significant improvement in the hardness of TiAlN / TiN multilayers as compared to the rule-of-mixture value, whereas TiN / NbN multilayers showed an improvement in the hardness, which was two times the rule-of-mixture value. The low hardness of TiAlN / TiN multilayers has been attributed to interfacial diffusion.

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Section: Introductionmentioning

confidence: 99%

A Raman-scattering study on the interface structure of nanolayered TiAlN∕TiN and TiN∕NbN multilayer thin films grown by reactive dc magnetron sputtering

Barshilia

Rajam

2005

Journal of Applied Physics

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“…Another very useful technique for controlling the quality of these thin films is Raman scattering. Raman spectroscopy has been frequently used to study conventional superlattices based on III-V compounds [9][10][11], II-VI materials [8,[12][13][14], and IV-IV systems [15] (see [16] for a review). Recently, it was also applied to weak Raman signals from extremely thin films and to characterize their structural properties [7,10,11,17].…”

Section: Introductionmentioning

confidence: 99%

Evolution of Raman spectra as a function of layer thickness in ultra-thin InSe films

Schwarcz¹,

Kanehisa²,

Jouanne³

et al. 2002

J. Phys.: Condens. Matter

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Experimentally, when compared with III-V, II-VI, or IV-IV layered systems, the InSe Raman spectrum does not change very much as a function of the number of InSe layers. A simple linear chain model is sufficient to explain this effect. In our model, two parameters are used to characterize Raman spectra: the halfwidth Γ characterizing the sample quality and the coherence length Λ determined by the sample thickness n. Our analysis shows that the coherence length Λ is linear in n. We obtain a fair agreement between computed and experimental Raman spectra.

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“…From the frequency shift for the films on substrates with respect to the bulk values of LO or TO phonon frequencies, we can estimate the elastic strains due to lattice mismatch and the thermal strains due to the difference in thermal expansion coefficients of films and substrates [14, 161. because of the lack of bulk data at low temperatures. The parameters ( p and q) related to the third elastic coefficient of ZnTe, estimated from elastic compliances, are roughly one order smaller than those of ZnSe [17]. However, the lattice misfit (7.3 or 7.6%) between ZnTe and ZnSe or GaAs is 28 times larger than that (0.27%) between ZnSe and GaAs.…”

Section: Temperature Dependence Of Lo Phonons In Z N Telznse Filmsmentioning

confidence: 88%

Optical properties of MBE-grown ZnTe on GaAs. Effects of a ZnSe buffer layer

Iida

Takojima

Imai

et al. 1993

Phys. Stat. Sol. (a)

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Effects of a ZnSe buffer layer on the optical properties in ZnTe on GaAs grown by molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and Raman scattering. From PL results an improvement of crystallinity of ZnTe films is recognized as the thickness of the ZnSe buffer layer increases. This is explained well by an exponential increase of the ratio of neutral acceptor‐exciton complex to deep level emission with increasing ZnSe buffer layer thickness. Raman scattering results show an elongation of the ZnSe lattice by expansion due to accomodation of the ZnTe lattice. The large critical thickness of ZnTe/ZnSe is estimated experimentally to be about 30 nm in MBE growth on GaAs because of similar electronegativity in growth of ZnTe on ZnSe. The result obtained from the temperature dependence of LO phonon frequencies supports also an expansion of the ZnSe lattice obtained by Raman scattering.

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Raman scattering from ZnTe-ZnSe strained-layer superlattices

Cited by 42 publications

References 12 publications

A Raman-scattering study on the interface structure of nanolayered TiAlN∕TiN and TiN∕NbN multilayer thin films grown by reactive dc magnetron sputtering

A Raman-scattering study on the interface structure of nanolayered TiAlN∕TiN and TiN∕NbN multilayer thin films grown by reactive dc magnetron sputtering

Evolution of Raman spectra as a function of layer thickness in ultra-thin InSe films

Optical properties of MBE-grown ZnTe on GaAs. Effects of a ZnSe buffer layer

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