Raman Scattering in nZnSIn₂S₃ Layered Compounds

Abstract

Polarized Raman spectra obtained from carefully characterized single crystals of ZnIn,S,, Zn,In,S,, and Zn,In,S, are reported. The low-frequency Raman spectra clearly differentiate between the compounds, whereas at high frequencies the vibrational features are less sensitive to the actual crystal structure. The results are interpreted on the basis of a molecular-like picture based on the intrinsic cationic disorder.

A tunable band gap of the layered semiconductor Zn3In2S6 under pressure

“…S4, ESI †), with the strongest Raman mode at B250 cm À1 attributed to the A 1g mode associated with the in-plane vibration of the S atoms in the vdW gap. 39 Moreover, the calculated Raman spectrum at ambient pressure is consistent with the experimental data (see Fig. S5, ESI †), suggesting that the structure shown in Fig.…”