Raman scattering in ultraheavily doped silicon

Kp, Jain; Shukla, Arun K.; Sc, Abbi; Bałkanski, M.

doi:10.1103/physrevb.32.5464

Cited by 21 publications

(16 citation statements)

References 7 publications

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“…For partially disordered systems, this results in the damping of the two-phonon Raman amplitude [6]. In fact, this happens in our Raman spectra where no signal of the large two-phonon peak corresponding to the 2LO around 1100 cm -1 is observed.…”

Section: Experimental Data and Discussionmentioning

confidence: 59%

Raman measurements on nanocolumnar ZnO crystals

Marı́

Cembrero

Manjón

et al. 2005

Physica Status Solidi (a)

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Hexagonal zinc oxide nanocolumns have been grown on conducting F-doped SnO 2 substrates by galvanostatic electrodeposition. Raman and photoluminescence spectra of the ZnO nanocolumns have been measured in several samples with different size distributions as a function of the annealing temperature. Photoluminescence properties of ZnO nanocolumns are strongly influenced by the crystalline quality of the samples. The dependence of the crystalline quality of the samples on the growth parameters and annealing temperature is discussed. In particular, the Raman spectra of as-grown samples exhibit broad bands that correlate perfectly with the one-phonon density of states obtained from recent ab initio calculations.

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Section: Experimental Data and Discussionmentioning

confidence: 59%

Raman measurements on nanocolumnar ZnO crystals

Marı́

Cembrero

Manjón

et al. 2005

Physica Status Solidi (a)

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“…This latter modification, which is actually also discernible in Figure 14, can be explained by the unceasing growth of the crystalline Si-np until they reached a maximal size and/or by the relaxation of stress [46]. Also, (3) the intensity of the 2TA phonon mode at 300 cm −1 was quenched after 1 min of laser exposure which may result from disorder in the crystalline structure [52]. Besides, in the inset of Figure 15, a picture of the laser spot course while the thin layer was displaced perpendicularly to the laser beam is shown.…”

Section: Resultsmentioning

confidence: 88%

Structural and optical characterization of pure Si-rich nitride thin films

et al. 2013

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The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

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“…The possible Fano interaction between continuum of electronic states and discrete phonon state can be studied by Raman scattering [25,26] or IR spectroscopy [27]. The general properties of Fano effect can be understood by considering the special case of heavily doped Si [3,4,10,28,29] and ion-implanted Si [30], where Fano interaction is observed if the level of doping is of the order of 10 19 cm −3 , the semiconductor behaves like a degenerate semiconductor. Position of the Fermi level goes deep inside the conduction band, which gives rise to continuous electronic Raman scattering between the ∆ 1 and ∆ 2 bands along (100) directions [3,4].…”

Section: Introductionmentioning

confidence: 99%

Asymmetry to symmetry transition of Fano line-shape: analytical description

Kumar

2012

Indian J Phys

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An analytical description of Fano line-shape asymmetry ratio has been presented here for a general case. It is shown that Fano line-shape becomes less asymmetric as |q|is increased and finally becomes completely symmetric in the limiting condition of q equal to infinity. Asymmetry ratios of Fano line-shapes have been calculated and are found to be in good consonance with the reported expressions for asymmetry ratio as a function of Fano parameter. Application of this derivation is also mentioned for explanation of asymmetry to symmetry transition of Fano line-shape in quantum confined silicon nanostructures.

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Raman scattering in ultraheavily doped silicon

Cited by 21 publications

References 7 publications

Raman measurements on nanocolumnar ZnO crystals

Raman measurements on nanocolumnar ZnO crystals

Structural and optical characterization of pure Si-rich nitride thin films

Asymmetry to symmetry transition of Fano line-shape: analytical description

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