Raman Scattering in ε‐GaSe and ZnIn<sub>2</sub>S<sub>4</sub> Single Crystals under Pressure

Vinogradov, E. A.; Zhizhin, G. N.; Melnik, N. N.; Subbotin, S. I.; Panfilov, V. V.; Allakhverdiev, K. R.; Baeaev, S. S.; Zhitar, V. F.

doi:10.1002/pssb.2220990121

Cited by 23 publications

(9 citation statements)

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“…It is worth to note that in the isostructural compound TlGaS 2 , the first-order PT caused by layer structure reconstruction was observed at essentially high pressure [33]. The manifestation of PT near P cr ∼ 0.5 GPa in the frequency range characteristic of intralayer vibrations [12,13], was not revealed in the present work. It could be due to the small number of experimental points in the pressure interval up to 0.5 GPa.…”

Section: Resultscontrasting

confidence: 58%

“…Recently, there has been no consensus about the presence of PT in TlGaSe 2 under pressure at T = 300 K until the publication [11]. The assumptions regarding the presence of a reversible PT in the TlGaSe 2 crystals at P ∼ 0.5 GPa were formulated in the literature [12,13] on the basis of pressure dependences of some phonon modes in Raman and resonance Raman spectra. Thermodynamic investigations [14] also indicated the presence of reversible PT in this compound at a pressure up to 1.2 GPa.…”

Section: Introductionmentioning

confidence: 99%

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High Pressure Raman Study of Layered Semiconductor Tlgase₂

Jabarov

Aliyeva

Mammadov

et al. 2018

Materials Science-Poland

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Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2is similar

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Section: Resultscontrasting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

High Pressure Raman Study of Layered Semiconductor Tlgase₂

Jabarov

Aliyeva

Mammadov

et al. 2018

Materials Science-Poland

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“…modes E′′ (2) E′′ ( 4 respectively. The corresponding Grüneisen parameters are summarised in Table 1, where for comparison the values of Γ given in [6] are also presented.…”

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confidence: 99%

“…Several Raman scattering experiments under pressure have already been performed on GaSe [3−6]. The pressure dependence and the mode Grüneisen parameters for Raman-active phonons of ε-GaSe have been measured up to 1 GPa [3,4], 3.5 GPa [5], and 8 GPa [6]. Recently [7,8] high-pressure X-ray powder diffraction studies have been made on ε-GaSe.…”

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confidence: 99%

Raman scattering under pressure and the phase transition in ε‐GaSe

Kulibekov

Olijnyk

Jephcoat

et al. 2003

Physica Status Solidi (b)

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Raman scattering in ε-GaSe has been investigated at room temperature in a diamond anvil cell by using helium gas as a pressure transmitting medium. The first observation of the solid − solid phase transition under pressure from a hexagonal structure at ambient pressure to a NaCl-type at around 29.2 GPa is reported. A photoinduced change in the pressurised crystal was observed. The transition under pressure was found to be irreversible at room temperature. It was shown that the pressurised form of ε-GaSe at ambient conditions most probably belongs to the γ-type as characterised by an increased intensity of the Raman modes at 234 cm −1 and 250 cmGallium selenide is a layer semiconductor. Four distinct modifications, the β-, the ε-, the γ-and the δ-types were reported for GaSe, differing by the stacking order of the two-dimensional Se−Ga−Ga−Se sheet [1]. The differences between these types arise from the stacking of layers as well as from the number of layers per unit cell. The ε-modification (D 3h 1 space group (SG), containing two layers per unit cell) is the most common and best studied. Up to now the existence of the β-modification (D 6h 4 SG, two layers per unit cell) has not been confirmed. The γ-type has three layers (C 3v 5 SG), and the δ-type contains four layers per unit cell (C 6v 4 SG). Normally the crystals grown by the Bridgman method are a mixture of ε-and γ-types, with a predominant content of the former.Most common and well investigated among the different polytypes is ε-GaSe, which is one of the promising materials for far-infrared conversion applications [2]. The properties of ε-GaSe at ambient conditions (room temperature, atmospheric pressure) are reasonably well known. Several Raman scattering experiments under pressure have already been performed on GaSe [3−6]. The pressure dependence and the mode Grüneisen parameters for Raman-active phonons of ε-GaSe have been measured up to 1 GPa [3, 4], 3.5 GPa [5], and 8 GPa [6]. Recently [7,8] high-pressure X-ray powder diffraction studies have been made on ε-GaSe. It was shown that at pressures of 29 GPa [7] and of around 25 GPa [8] the crystal undergoes a phase transition (PT) to the NaCl-type structure. The reason for this discrepancy is

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“…Several experiments with GaSe were performed under pressure, like photoconductivity [1], Raman scattering [2][3][4], optical transmission [5][6][7][8][9], Hall effect and resistivity measurements [10]. To our knowledge there are no data about the photoluminescence (PL) of the direct free excitons for above mentioned crystals at ambient conditions, except that for GaSe published in [11].…”

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confidence: 99%