2016
DOI: 10.1039/c5ra26261e
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Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

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Cited by 14 publications
(12 citation statements)
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“…That is, the behavior of the LVM is nearly unencumbered by modifications due to next‐nearest neighbor O atoms. However, with increasing O content the ZnS 1−x O x alloy system is predicted by the modified random element isodisplacement model to exhibit “two mode” behavior, in agreement with experiment . That is, the peak position of the LVM will shift to higher energies with increasing O content, similar to findings in other alloy systems .…”
Section: Composition Dependencesupporting
confidence: 81%
“…That is, the behavior of the LVM is nearly unencumbered by modifications due to next‐nearest neighbor O atoms. However, with increasing O content the ZnS 1−x O x alloy system is predicted by the modified random element isodisplacement model to exhibit “two mode” behavior, in agreement with experiment . That is, the peak position of the LVM will shift to higher energies with increasing O content, similar to findings in other alloy systems .…”
Section: Composition Dependencesupporting
confidence: 81%
“…In thin film photovoltaics, a rigorous control of the optoelectronic properties of the growing layers is of major importance in terms for good reproducibility and homogeneity. We have shown in previous works that advanced Raman spectroscopy can assess relevant properties in photovoltaic materials such as film thickness24, crystal structure25, defect densities26, composition272829 and how it can be used as a versatile and fast tool for quality control and process monitoring24.…”
mentioning
confidence: 99%
“…For these applications, optical spectroscopy based on Raman scattering has already proved its versatility for controlling various important material parameters of the stacks used in thin film solar cells, including crystallinity 8 , absorber and buffer composition 9, 10 , buffer layer thickness 8 , presence of secondary interfacial phases 11, 12 and doping concentration 13 in separate layers, as well as complete devices 8 . This includes also the use of resonant Raman strategies for the high sensitivity assessment of nanometric layers and interfacial regions in the device structure.…”
Section: Introductionmentioning
confidence: 99%