Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2−xSbxTe3−ySey

Kumar, N.; Surovtsev, N. V.; Yunin, P. A.; Ishchenko, D. V.; Milekhin, I. A.; Lebedev, S. P.; Lebedev, A. A.; Tereshchenko, O. E.

doi:10.1039/d4cp01169d

Phys. Chem. Chem. Phys.

2024

DOI: 10.1039/d4cp01169d

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Raman scattering spectroscopy of MBE grown thin film topological insulator Bi_2−xSb_xTe_3−ySe_y

N. Kumar,

N. V. Surovtsev,

P. A. Yunin

et al.

Abstract: BSTS thin films topological insulators was grown by MBE on the two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. Crystallographic properties of BSTS...

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Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films

Kumar,

Surovtsev,

Ishchenko

et al. 2024

J Raman Spectroscopy

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Phonon occupation is temperature (T) dependent; it may participate in scattering with electronic states of topological insulators (TIs). Longitudinal optical (LO) phonons and in Bi2 − xSbxTe3 − ySey (BSTS) was resonantly excited by a photon energy (Ep) 2.33 eV due to electronic transition of unoccupied conduction band. The intensity of these modes was enhanced in Bi2Te3 film at Ep 1.87 eV, which is close to the electronic transition of unoccupied Dirac states. Fröhlich coupling strength was the main mechanism for higher intensity of and modes. At 300 K, the intensity of the mode was significantly decayed in both the BSTS and Bi2Te3 at Ep 2.33 and 1.87 eV due to the anharmonic coupling. However, at similar value of T, spectral profile of and modes was not affected because of the lower probability of decay rate of these phonons. In resonant condition, well‐resolved Raman forbidden surface modes were observed at T of 50 K. At 300 K, more asymmetric Fano profile of surface phonon was observed due to the anharmonic coupling. The study indicated that at high T, mode and anharmonic coupling may become primary cause for scattering with electronic states of the TIs. However, at low T, primarily, both the LO phonons participated in the scattering.

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Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films

Kumar,

Surovtsev,

Ishchenko

et al. 2024

J Raman Spectroscopy

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Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

Kumar,

Ishchenko,

Milekhin

et al. 2024

Phys. Chem. Chem. Phys.

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Raman scattering spectroscopy of MBE grown thin film topological insulator Bi_2−xSb_xTe_3−ySe_y

Abstract: BSTS thin films topological insulators was grown by MBE on the two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. Crystallographic properties of BSTS...

Cited by 2 publications

References 39 publications

Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films

Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films

Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

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Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2−xSbxTe3−ySey

Abstract: BSTS thin films topological insulators was grown by MBE on the two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. Crystallographic properties of BSTS...

Cited by 2 publications

References 39 publications

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

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Product

Resources

About

Raman scattering spectroscopy of MBE grown thin film topological insulator Bi_2−xSb_xTe_3−ySe_y

Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films

Resonance Raman Scattering of Topological Insulators Bi₂Te₃ and Bi_2 − xSb_xTe_3 − ySe_y Thin Films