Raman scattering studies of surface modification in 1.5 MeV Si-implanted silicon

Huang, Xinming; Ninio, F.; Brown, L. J.; Prawer, S.

doi:10.1063/1.359171

Cited by 41 publications

(23 citation statements)

References 24 publications

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“…The sample surface can also act as a sink for vacancies. The recombination processes or the role of the surface can also be responsible for the saturation of damage in the SR where no increase in damage is observed beyond a fluence of 5ϫ10 13 ions/cm 2 . The distribution of the damage profile is governed by the balance between the production of damage and the annealing of defects.…”

Section: Resultsmentioning

confidence: 99%

“…This result is surprising since the formation of amorphous structures should alleviate the stress. 13,21 It is important to note that in this Raman study results are obtained from a probing depth of ϳ770 nm, the total penetration depth of the laser. In another study, 12 we have reported the variations in stress as a function of depth where a compressive stress near the surface evolves to a tensile stress in the implanted zone, which indicates a separation of vacancy-and interstitial-related defects with depth.…”

Section: Resultsmentioning

confidence: 99%

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Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Dey

Pradhan

Varma

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted siliconThe radiation damage induced in Si͑100͒ due to 1.5 MeV Sb ions has been studied as a function of fluence using the Rutherford backscattering/channeling ͑RBS/C͒ technique and Raman spectroscopy. The damage profiles have been extracted from the RBS/C spectra and the results compared with SRIM'97 code calculations. For a fluence of 1ϫ10 14 ions/cm 2 , though the position of the damage profile is in agreement with the defect profile calculated using SRIM code, theory overestimates the damage in the surface region, suggesting dynamic self-beam annealing. The total amount of damage obtained as a function of implant dose exhibits two behaviors; a small net damage and a slow rate of damage accumulation for low fluences with a crossover to faster rates beyond a dose of 1ϫ10 13 ions/cm 2 . At this dose, a defected-amorphized zone of a critical size can form, which may easily enlarge by further accumulation of defects at higher fluences. The total damage has been compared with the results from Raman scattering and it is observed that the net damage as detected by Raman is slightly higher at the fluences where crystalline and amorphous zones coexist. The crystalline-to-amorphous ͑c/a͒ transition in Si as a function of fluence has been investigated by RBS/C and Raman scattering. The study demonstrates that Raman scattering is more effective in probing the small concentrations of defects produced during the early stages of c/a transition.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Dey

Pradhan

Varma

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The implantation of Si + ions into a silicon wafer with an energy of 1.5 MeV and doses ranging from 1×10 11 to 1×10 15 Si + ions/cm 2 lead to compressive residual stresses up to 120 MPa in the surface layer. [31] If the shift was solely caused by internal stresses it would correspond to tensile stresses ranging from 2.5 to 10 GPa. [32] Tensile stresses in this range would most likely lead to fracture of the lamella.…”

Section: Discussionmentioning

confidence: 99%

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Wermelinger

Spolenak

2009

J Raman Spectroscopy

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Silicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross-sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga + ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range.

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“…4 -45 Raman scattering has also been performed on Si nanocrystals prepared by other methods, such as plasma transport, 15,46 gas evaporation technique, 47 reactive sputtering technique, 48 molecular beam deposition, 49 laser annealing of a-Si : H samples, 50 plasma-enhanced chemical vapor deposition 51 and surface modification by implantation. 40 From the observed phonon shifts the particle sizes have been estimated mostly using the confinement model CM-I (Eqn (4)) with Gaussian weighting functions or with the weighting function W r, L D sin ˛r /˛r, by analogy with the ground state of an electron in a hard sphere. 17,18 In some cases the nanocrystal sizes were determined independently by other methods.…”

Section: Size Determination By Raman Scatteringmentioning

confidence: 99%

Raman scattering of nanoporous semiconductors

Irmer

2007

J Raman Spectroscopy

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The application of Raman scattering for characterizing porous semiconductors is reviewed. For structural units of only a few nanometers in size, as observed in por-Si or por-Ge, phonon confinement effects appear that can be used for size determinations. In polar porous semiconductors, surface-related phonons (Fröhlich modes) between the TO and LO phonons appear. These surface phonons couple with the plasmons of free charge carriers in the porous medium. Examples are given of porous layers on III-V semiconductors in which Raman scattering is used to study charge carrier depletion. For theoretical treatment, the effective medium theory is used, taking into account the morphology with parallel pores or nanocolumns with radii down to a few tens of nanometers.

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Raman scattering studies of surface modification in 1.5 MeV Si-implanted silicon

Abstract: Cleaved Si(111) 2×1 surface studied by MeV ion scattering

Cited by 41 publications

References 24 publications

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Raman scattering of nanoporous semiconductors

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