Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Pradhan, Gopal K.; Bera, Arpan; Kumar, Pradeep; Muthu, D. V. S.; Sood, Anil K.

doi:10.1016/j.ssc.2011.11.029

Cited by 30 publications

(31 citation statements)

References 21 publications

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“…As regards the discussion of the nature of the high‐pressure phases of Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 , high‐pressure Raman scattering measurements give support to the high‐pressure phases found by Zhu et al Raman‐active modes of the C2/m phase can be clearly followed 53, 54, 60–62. However, the analysis of the C2/c phase is more difficult due to the decrease of the intensity and the broadening of the Raman modes.…”

Section: High‐pressure Experimentsmentioning

confidence: 59%

“…Additional information to discuss the nature of the ETT of the R‐3m phase and to resolve the high‐pressure phases of this family of materials at room temperature comes from recent high‐pressure Raman scattering measurements. Early high‐pressure Raman scattering measurements were performed up to a few GPa but that did not allow to discuss neither the ETT nor the high‐pressure phases 5, 25; however, these phenomena have been recently studied by means of high‐pressure Raman measurements in Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 53, 54, 60–62. These studies show that the ETT is evidenced in the three compounds by a change of the pressure coefficients of both Raman mode frequencies and linewidths (see Fig.…”

Section: High‐pressure Experimentsmentioning

confidence: 99%

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High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

Manjón

Vilaplana

Gomis

et al. 2013

Physica Status Solidi (b)

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are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500 K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented.

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Section: High‐pressure Experimentsmentioning

confidence: 59%

Section: High‐pressure Experimentsmentioning

confidence: 99%

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

Manjón

Vilaplana

Gomis

et al. 2013

Physica Status Solidi (b)

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“…In particular, a pressure-induced electronic topological transition has been observed for all of these materials in the R -3 m phase10111822. This feature has been associated with an enhancement of their thermoelectric properties under pressure14243.…”

Section: Discussionmentioning

confidence: 90%

“…Regarding the former, recent high-pressure studies of the Bi 2 Te 3 678910111213, Bi 2 Se 3 1415161718, and Sb 2 Te 3 91920212223 compounds have revealed several interesting effects. In particular, a pressure-induced electronic topological transition has been observed for all of these materials in the R -3 m phase10111822.…”

Section: Discussionmentioning

confidence: 99%

“…As an example, their thermoelectric properties are enhanced by application of external pressure1, a feature attributed to an electronic topological transition. More recent and detailed high-pressure investigations on Bi 2 Te 3 678910111213, Bi 2 Se 3 1415161718, and Sb 2 Te 3 91920212223 have revealed a plethora of phase transitions. In particular, novel structures with higher cationic coordinations67141518192021, insulator-to-metal transitions916, and even superconductivity8121323 have been observed upon increasing pressure.…”

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confidence: 99%

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Sb2Se3 under pressure

Efthimiopoulos

Zhang

Kucway

et al. 2013

Sci Rep

104

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Selected members of the A2B3 (A = Sb, Bi; B = Se, Te) family are topological insulators. The Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a recent high-pressure study, however, indicated that pressure transforms Sb2Se3 from a band insulator into a topological insulator above ~2 GPa; in addition, three structural transitions were proposed to occur up to 25 GPa. Partly motivated by these results, we have performed x-ray diffraction and Raman spectroscopy investigations on Sb2Se3 under pressure up to 65 GPa. We have identified only one reversible structural transition: the initial Pnma structure transforms into a disordered cubic bcc alloy above 51 GPa. On the other hand, our high-pressure Raman study did not reproduce the previous results; we attribute the discrepancies to the effects of the different pressure transmitting media used in the high-pressure experiments. We discuss the structural behavior of Sb2Se3 within the A2B3 (A = Sb, Bi; B = Se, Te) series.

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Bi‐centric view of the isostructural phase transitions in α‐Bi₂Se₃ and α‐Bi₂Te₃

Zhu

Dong

et al. 2017

Physica Status Solidi (b)

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Te 3 ) have been reported to exhibit a pressure-induced isostructural phase transition (IPT) in the low-pressure region (<5 GPa); however, the underlying mechanism is not fully understood yet. Here, we comparatively investigated the IPTs in a-Bi 2 Se 3 and a-Bi 2 Te 3 using high-pressure Bi L 3 -edge X-ray absorption fine structure spectroscopy, complemented with density functional theory (DFT) calculation. Near the IPT, the slope of the Bi L 3 -edge absorption energy shows a sudden decrease. In contrast to the monotonous shortening of the Bi-Bi bond-distance under compression, it is moreover rather surprising that the Bi-Se2 (Te2) and Bi-Se1 (Te1) bonddistances exhibit abnormal elongations around the IPT, which is synchronized with abrupt increases for their Debye-Waller factor. DFT calculation results show that near the IPT a structural distortion may appear for extremely small energy barrier. Those results indicate that each quintuple layer unit shrinks along the layer direction but elongates perpendicular to the layers at the onset of the IPT, which would be associated with a remarkable increase for the local structural disorder. Therefore, our findings suggest that the IPTs in a-Bi 2 Se 3 and a-Bi 2 Te 3 are coupled with a simultaneous charge redistribution and structural distortion accompanied with a static structural disorder increase.Sketch of the changes of local structure of centric Bi and lattice structure around the IPT.

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Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Abstract: We report Raman signatures of electronic topological transition (ETT) at 3. Electronic mail-asood@physics.iisc.ernet.in

Cited by 30 publications

References 21 publications

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

Sb2Se3 under pressure

Bi‐centric view of the isostructural phase transitions in α‐Bi₂Se₃ and α‐Bi₂Te₃

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Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Abstract: We report Raman signatures of electronic topological transition (ETT) at 3. Electronic mail-asood@physics.iisc.ernet.in

Cited by 30 publications

References 21 publications

High‐pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

High‐pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

Sb2Se3 under pressure

Bi‐centric view of the isostructural phase transitions in α‐Bi2Se3 and α‐Bi2Te3

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Product

Resources

About

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

High‐pressure studies of topological insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃

Bi‐centric view of the isostructural phase transitions in α‐Bi₂Se₃ and α‐Bi₂Te₃