Raman spectra of AℓN, cubic BN and BP

Brafman, O.; Lengyel, G.; Mitra, S. S.; Gielisse, P. J.; Plendl, J. N.; Mansur, L. C.

doi:10.1016/0038-1098(68)90503-6

Cited by 137 publications

(29 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Very little is known about the vibrational properties of 3C BN for which only a few infrared and first-order Raman experiments exist. 63,65,66 The agreement between our computations and available experiments is excellent for C and SiC. It gives confidence in our results in the case of 3C BN, where a direct comparison with experiment is only possible for the zone-center ͑see Table V͒ and of 3C AlN, where no experimental data are available.…”

Section: Vibrational Propertiessupporting

confidence: 80%

Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

1997

View full text Add to dashboard Cite

We report first-principles calculations of the structural, lattice-dynamical, and dielectric properties for zincblende and wurtzite BN and AlN. The ground-state properties, i.e., the lattice constants, the bulk moduli, the ionicity factors of the chemical bonds, and the elastic constants, are calculated using a plane-wavepseudopotential method within the density-functional theory. A linear-response approach to the densityfunctional theory is used to derive the Born effective charges, the high-frequency dielectric constants, and the phonon frequencies and eigenvectors. The different behavior of the structural and lattice-dynamical properties of BN and AlN is discussed in terms of the different ionicities, strengths of the covalent bonds, and the atomic masses. Our results are in excellent agreement with the experimental data available.

show abstract

Section: Vibrational Propertiessupporting

confidence: 80%

Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

1997

View full text Add to dashboard Cite

show abstract

“…In this geometry two additional TO modes, at 1618 and 1305 cm Ϫ1 , appear in the spectra. While these modes are strictly TO with mode polarizations perpendicular to the surface, 18 they appear near the LO frequencies of bulk hexagonal 21 ͑h-BNLO is equal to 1610 cm Ϫ1 ͒ and cubic 22,23 BN ͑c-BNLO is equal to 1305 cm Ϫ1 ͒, respectively. The peak positions of the LO peaks in the spectra are listed in Table I ͑bottom half͒.…”

Section: Resultsmentioning

confidence: 94%

Islanding and strain-induced shifts in the infrared absorption peaks of cubic boron nitride thin films

1997

View full text Add to dashboard Cite

Experimental and theoretical investigations of the infrared-active, polarization-dependent phonon frequencies of cubic boron nitride films have been performed in light of recent claims that large frequency shifts during initial nucleation are the result of strain caused by highly nonequilibrium growth conditions. We show that the formation of small, separate grains of cubic boron nitride during the initial growth leads to a frequency shift in the infrared-active transverse-optic mode, polarized normal to the substrate, which is opposite in sign and twice the magnitude of the shift for modes polarized parallel to the substrate. In contrast, film strain causes a frequency shift in the mode polarized normal to the substrate, which is much smaller in magnitude than the frequency shift for modes polarized parallel to the substrate. Normal and off-normal incidence absorption measurements, performed at different stages of nucleation and growth, show that large frequency shifts in the transverse-optic-phonon modes during the initial stage of growth are not compatible with the expected effects of strain, but are in large part due to nucleation of small isolated cubic BN grains which coalesce to form a uniform layer. Numerical results from a simple model of island nucleation and growth are in good agreement with experimental results.

show abstract

“…This spectrum was obtained by computer subtraction of the Si (100) substrate background. The strong absorption peak at 665 cm-' is due to the transverse optical phonon modes of AIN (28)(29). These phonon modes clearly show that the laser deposited films contain AIN phase.…”

Section: Ain Filmsmentioning

confidence: 92%

Pulsed Laser Deposition of Superhard Nitride Coatings

Kumar

1999

Materials and Manufacturing Processes

View full text Add to dashboard Cite

Nitrides coatings have a large number of applications in high-technology industries due to many unique physical, chemical, and mechanical properties. Thin films of aluminum nitride (AIN), silicon nitride (Si,N,), and carbon nitride (CN,) were deposited on Si (100) substrates using the pulsed laser deposition (PLD) method. The seeding of titanium nitride (TiN) before the CN, deposition has promoted the growth of the predominantly crystalline CN,films. The laser deposition parameters and substrate temperature play an important role in fabricating high quality films. The structural and microstructural properties of these films have been characterized using x-ray diffraction, and scanning electron microscope techniques. The Fourier Transform Infrared (FTIR) and x-ray photoelectron spectroscopy (XPS) have been used to investigate the bonding properties in CNx films. The mechanical properties of the films were evaluated to correlate with the processing parameters of the deposited films. It has been shown that the films with crystalline quality structure have higher hardness and modulus values.

show abstract

Raman spectra of AℓN, cubic BN and BP

Cited by 137 publications

References 11 publications

Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

Islanding and strain-induced shifts in the infrared absorption peaks of cubic boron nitride thin films

Pulsed Laser Deposition of Superhard Nitride Coatings

Contact Info

Product

Resources

About