Raman spectroscopic investigation of boron doped hydrogenated amorphous silicon thin films

Shrestha, K.; Lopes, V. C.; Syllaios, A. J.; Littler, C. L.

doi:10.1016/j.jnoncrysol.2014.07.013

Cited by 10 publications

(3 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, the FWHM of TO mode and Δθ B slightly increase with increase in MFR due to incorporation of additional carbon atoms bonded with Si, which increases the bond angle deviation. These FWHM and Δθ B values are comparable with other reported works in literature [26].…”

Section: Ramansupporting

confidence: 92%

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Madaka

Kanneboina

Agarwal

2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The a-Si:H based n-i-p solar cells were fabricated on flexible polyethylene terephthalate (PET), polyimide (PI) and rigid glass substrates with a-SiC:H(p) as a window layer using radio frequency plasma enhanced chemical vapor deposition technique. The effect of methane flow rate (MFR) on the structural and optoelectronic properties of a-SiC:H(p) films deposited at a low substrate temperature (T s ) 110 °C were studied on Corning 1737 glass (glass) substrate. The influence of hydrogen plasma treatment (HPT) at n/i and i/p interface of solar cells was also investigated. The HPT at interfaces was found to minimize interface defects and enhance the optical and electrical properties of the solar cell. The solar cell with a-SiC:H(p) as a window layer with HPT at interfaces have shown improvement in the series resistance (R s ), shunt resistance(R sh ), open circuit voltage (V oc ) and fill factor (FF) as compared to the solar cells fabricated with conventional a-Si:H(p). The efficiencies of fabricated solar cell at 110 °C on flexible PET and PI are 3.36 and 4.06%, which is close to 4.42% on rigid glass. Our results demonstrate that, a-SiC:H(p) as a window layer with HPT at n/i and i/p interfaces can be considered as a practical method to produce the a-Si:H based solar cells on low cost flexible substrates at low substrate temperature.

show abstract

Section: Ramansupporting

confidence: 92%

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Madaka

Kanneboina

Agarwal

2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Поэтому характер изменения проводимости связан, по-видимому, с изменением способа, которым атомы бора встраиваются в структуру кремниевой пленки. При увеличении концентрации бора помимо связей B−Si происходит образование за счет пассивации бора водородом электрических нейтральных групп B−H и B−H−Si [21], что приводит к снижению проводимости легированных пленок кремния.…”

Section: результаты эксперимента и обсуждениеunclassified

Осаждение Пленок Кремния, Легированных Бором И Фосфором Газоструйным Плазмохимическим Методом

Щукин¹,

Шарафутдинов²,

Константинов³

2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ( a -Si:H) with a conductivity up to 5.2 × 10^–3 (Ω cm)^–1 are fabricated; when doping with phosphorus, microcrystalline silicon films ( mc -Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)^–1 are fabricated.

show abstract

“…However, a detailed comparison between the spectra for the p-doped S1 sample and intrinsic P ones, grown, as we recall at a somewhat higher temperature, showed that boron present in S1 led to the decrease of both the short and medium range crystalline order. The latter can be elucidated based on [19], by noting that the TO mode in S1 was wider and the TA-to-TO mode Table 1. Deposition conditions and measured index and band gap of a-Si films used in this study.…”

Section: Sample Fabrication and Femtosecond Optical Pump-probe Measur...mentioning

confidence: 99%

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Serafini¹,

Akbas²,

Crandall³

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

A femtosecond pump-probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ∼300-500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron-phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley-Read-Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

show abstract

Raman spectroscopic investigation of boron doped hydrogenated amorphous silicon thin films

Cited by 10 publications

References 20 publications

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Осаждение Пленок Кремния, Легированных Бором И Фосфором Газоструйным Плазмохимическим Методом

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Contact Info

Product

Resources

About

Raman spectroscopic investigation of boron doped hydrogenated amorphous silicon thin films

Cited by 10 publications

References 20 publications

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interface

Осаждение Пленок Кремния, Легированных Бором И Фосфором Газоструйным Плазмохимическим Методом

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Contact Info

Product

Resources

About

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface

Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H₂ plasma treatment at n/i and i/p interface