Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Yamaguchi, Makoto; Ueno, Shigeru; Kumai, Ryota; Kinoshita, Keita; Murai, Toshiaki; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi

doi:10.1007/s00339-010-5569-4

Cited by 52 publications

(19 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…13 They observed the Raman spectra of a-SiC, a-C, and a-Si, and pointed out that with increasing laser fluence the a-SiC state separates (transforms) into a-Si and a-C by atomic migration. In the present experiment the stress field and local heating generated during the scratch will promote the phase conversion.…”

Section: Amorphous Sic and Phase Conversionmentioning

confidence: 99%

Raman characterization of damaged layers of 4H-SiC induced by scratching

et al. 2016

View full text Add to dashboard Cite

Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spectroscopy. The results of the Raman measurement of the scratching grooves revealed that there were residual stress, defects, and stacking faults. Furthermore, with heavy scratching load, we found clusters of amorphous SiC, Si, amorphous carbon, and graphite in the scratching grooves. Analysis of the Raman spectra showed that SiC amorphization occurs first and surface graphitization (carbonization) is subsequently generated through the phase transformation of SiC. We expect that the Raman characterization of machined surfaces provides information on the machining mechanism for compound semiconductors.

show abstract

Section: Amorphous Sic and Phase Conversionmentioning

confidence: 99%

Raman characterization of damaged layers of 4H-SiC induced by scratching

et al. 2016

View full text Add to dashboard Cite

show abstract

“…A great many research works have been done in this field in past several decades [2][3][4][5][6][7][8][9][10][11][12] . For instances, nanogratings were produced by radial and azimuthal laser polarization modes [13] , pyramid-like spikes in a single crystal superalloy upon irradiation with picosecond laser pulses were investigated [14] .…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy and periodic surface structures of Mg:ZnO thin film fabricated by femtosecond laser pulses

Wang

Cheng

et al. 2014

Nanophotonics V

View full text Add to dashboard Cite

Mg doped ZnO thin films were prepared by magnetron sputtering and were irradiated by linearly polarized femtosecond laser pulse. Scanning electron microscopy (SEM) characterizations illustrated that regularly arranged nanoripples appeared on the ablation area with the period perpendicular to the polarization direction in the range of 250 nm~570 nm, but parallel to the polarization direction in the range of 2.2 μm~2.5 μm. The redshift of Raman peaks was observed at the central ablation area of the nanoripples, while, both blueshift and redshift were found at the edge area, which could be ascribed to the defects as well as the nanoripple structure.

show abstract

“…The period of the nanostructure thus formed is less than the wavelength of the incident laser. Several nanostructure-formation mechanisms were proposed, including the excitation of surface plasmon polaritons (SPPs) [13][14][15][16][17], second harmonic generation (SHG) [18], and self-organization from instability [19]. However, the precise mechanism involved remains under debate.…”

Section: Introductionmentioning

confidence: 99%

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Miyagawa

Okabe

Miyachi

et al. 2016

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

A 6H-SiC substrate with femtosecond-laser-induced periodic nanostructures was used as an underlayer for GaN growth. GaN nuclei were formed on the periodic nanostructure selectively. The in-plane direction of GaN was dependent on the in-plane direction of the SiC substrate, and no dependent on the direction of the periodic nanostructures or laser scanning. We suggest that the fine structure and high wettability at the region of the periodic nanostructure enhanced the adsorption of GaN nuclei preferentially. This technique will enable selective growth without masks or solution exposure.

show abstract

Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Cited by 52 publications

References 23 publications

Raman characterization of damaged layers of 4H-SiC induced by scratching

Raman characterization of damaged layers of 4H-SiC induced by scratching

Raman spectroscopy and periodic surface structures of Mg:ZnO thin film fabricated by femtosecond laser pulses

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Contact Info

Product

Resources

About