Raman spectroscopic study on boron-doped silicon nanoparticles

Non-destructive Raman evaluation of a heavily doped surface layer fabricated by laser doping with B-doped Si nanoparticles

“…The observed spectra showed a sharp band at approximately 520 cm À 1 and a broad band in the range between 450 and 530 cm À 1 . In the previous paper [14], the observed band of a B-doped Si nanoparticle film was decomposed into three bands at approximately 480, 510, and 520 cm À 1 , which were attributed to the amorphous, grain boundary, and crystalline regions of Si nanoparticles, respectively.…”

“…The band shape of the lightly doped crystalline Si was almost the same as that of intrinsic crystalline Si. In our previous study [13,14], the band at approximately 520 cm À 1 of intrinsic crystalline Si was fitted with a Voigt function. The 488.0-nm-excited Raman spectra of the sample after light irradiation with energy densities of 8.0 and 16.0 J/cm 2 and decomposed bands are shown in Figs.…”

“…Raman spectroscopy is useful for performing in situ nondestructive analysis and imaging measurements in atmosphere. Raman spectroscopy is a powerful tool for analyzing solid structures of Si nanoparticles [11][12][13][14][15][16] as well as bulk samples [17][18][19][20].…”

Hydrogen Passivated Silicon Grain Boundaries Greatly Reduce Charge Recombination for Improved Silicon/Perovskite Tandem Solar Cell Performance: Time Domain Ab Initio Analysis

“…Focusing on particular phonon modes on each system, Figure a shows that the main peak at ∼300 cm –1 in the GB system can be contributed to the 2TA acoustical phonons . The second major peak at about 520 cm –1 is a diagnostic mode of silicon and can be assigned to the Si–Si bond stretching mode . The minor park at 1000 cm –1 can be attributed to the high-frequency 2TO optical phonons .…”

“…72 The second major peak at about 520 cm −1 is a diagnostic mode of silicon and can be assigned to the Si−Si bond stretching mode. 73 The minor park at 1000 cm −1 can be attributed to the highfrequency 2TO optical phonons. 72 The silicon vacancy increases the amorphization and forms a continuum band between 300 and 520 cm −1 for all dynamic processes (Figure 4b).…”