Raman spectroscopy and phonon dynamics in strained 
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Hsu, Wei-Fan; Mellaerts, Simon; Bellani, Claudio; Homm, Pía; Uchida, Noriyuki; Menghini, Mariela; Houssa, Michel; Seo, Jin Won; Locquet, Jean‐Pierre

doi:10.1103/physrevmaterials.7.074606

Cited by 4 publications

(1 citation statement)

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“…In photoluminescence spectroscopy, the emission of luminescence upon excitation with a laser at suitable energy is associated with the transitions between different energy levels of Erbium ions [9]. In Raman Spectroscopy, the interaction of an excitation laser with the material can result in Raman scattering, which can provide information about the lattice dynamics and vibrational modes [10,11]. In turn, structural integrity, defects, and phonon dispersion can be revealed from Raman spectroscopy measurements.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of Er-doped YIG crystal

Yorulmaz,

Avinca,

Zainullin

et al. 2024

Quantum Information Science, Sensing, and Computation XVI

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The optical properties of erbium-doped yttrium iron garnet (Er:YIG) thin films have been studied at temperatures between 1.6 K and 260 K. Single crystal YIG thin films on GGG (Gd3Ga5O12) have been implanted with 20 keV Er + ions to the fluences of (0.5 or 1.0) × 10 16 ion/cm 2 . Erbium concentration has been kept on a level preventing a detrimental effect on the magnetic properties of the YIG garnet while providing the ion ratio enough for intense photoluminescence. Raman spectra for the YIG films on GGG substrate which are similar to the literature data have been observed. No effect of the erbium implantation on Raman peaks has been revealed and explained by the small thickness of the implanted layer. Photoluminescence signals appearing with temperature cooling between 680 nm and 720 nm have been observed and attributed to the emission from the erbium ions. Our result reveals that doping YIG by Er can be useful for tailoring the magneto-optical properties of YIG.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence of Er-doped YIG crystal

Yorulmaz,

Avinca,

Zainullin

et al. 2024

Quantum Information Science, Sensing, and Computation XVI

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Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V₂O₃ Films

Mellaerts,

Bellani,

Hsu

et al. 2024

ACS Appl. Mater. Interfaces

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Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V 2 O 3 ) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V 2 O 3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal−insulator transition in these ultrathin films. We shed light on the Mott−Hubbard nature of this transition, revealing a vanishing quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.

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Mott resistive switching initiated by topological defects

Milloch,

Figueruelo-Campanero,

Hsu

et al. 2024

Nat Commun

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Raman spectroscopy and phonon dynamics in strained V2O3

Cited by 4 publications

References 44 publications

Photoluminescence of Er-doped YIG crystal

Photoluminescence of Er-doped YIG crystal

Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V₂O₃ Films

Mott resistive switching initiated by topological defects

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Raman spectroscopy and phonon dynamics in strained V2O3

Cited by 4 publications

References 44 publications

Photoluminescence of Er-doped YIG crystal

Photoluminescence of Er-doped YIG crystal

Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V2O3 Films

Mott resistive switching initiated by topological defects

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Product

Resources

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Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V₂O₃ Films