2015
DOI: 10.2514/1.t4491
|View full text |Cite
|
Sign up to set email alerts
|

Raman Spectroscopy-Based Investigation of Thermal Conductivity of Stressed Silicon Microcantilevers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
8
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
6
3

Relationship

2
7

Authors

Journals

citations
Cited by 15 publications
(8 citation statements)
references
References 102 publications
0
8
0
Order By: Relevance
“…Hare et al 3 used a combined effect of temperature and pressure to Raman shift, providing an estimate of shock pressure and temperature in thin PMMA films under ablation heating. The work of Gan et al 47 49 suggests that the effects of temperature and stress on Raman shift can be assumed independent of each other under isothermal conditions. The work of Zhang et al 50 – 54 separated the effects of stress and temperature on Raman shift by calibration of peak width with temperature.…”
Section: Experiments Methodsmentioning
confidence: 99%
“…Hare et al 3 used a combined effect of temperature and pressure to Raman shift, providing an estimate of shock pressure and temperature in thin PMMA films under ablation heating. The work of Gan et al 47 49 suggests that the effects of temperature and stress on Raman shift can be assumed independent of each other under isothermal conditions. The work of Zhang et al 50 – 54 separated the effects of stress and temperature on Raman shift by calibration of peak width with temperature.…”
Section: Experiments Methodsmentioning
confidence: 99%
“…Equilibrium Molecular Dynamics calculations by Li et al on thermal conductivity of silicon NWs as a function of strain reveal higher thermal conductivity under compressive strain and lower thermal conductivity under tensile strain as compared to the unstrained one. [37][38][39] In addition, surface roughness causes more boundary scattering which greatly reduces the thermal conductivity of the silicon NW. 40 Therefore, the small discrepancy in our thermal conductivity could be due to the existence of compressive strain on the silicon NW.…”
Section: ∆>mentioning
confidence: 99%
“…Tomar and co-workers have developed the mechanical Raman spectroscopy that directly measures stresses in the material without using a constitutive model. 23,24 Several previous works 23,24 py for stress measurement without constitutive models under quasi-static loading conditions in different materials by comparing the results with constitutive model-based predictions.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, there is a strong demand to develop an in situ measurement of the dynamic polymorphic transformation of the drug substance throughout the tableting process. Tomar and co-workers have developed the mechanical Raman spectroscopy that directly measures stresses in the material without using a constitutive model. , Several previous works , have established the robustness and repeatability of mechanical Raman spectroscopy for stress measurement without constitutive models under quasi-static loading conditions in different materials by comparing the results with constitutive model-based predictions.…”
Section: Introductionmentioning
confidence: 99%