Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor

Kumar, Dinesh; Muralidhar, M.; Higuchi, Masaki; Murakami, Masato

doi:10.1016/j.jallcom.2017.06.081

Cited by 11 publications

(11 citation statements)

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“…The best J c (H) performance was achieved in the 2.8 wt% carbon-coated boron prepared MgB 2 . AFM study provides direct particle size information of MgB 2 prepared with various contents carbon-encapsulated boron [41], as shown in Fig. 13.…”

Section: Graphene-related Materials Dopingmentioning

confidence: 99%

“…It is the most practical method to prepare MgB 2 applicable to industries. Grain size distributions in the samples prepared by boron powders with g 0 wt% and h 2.8 wt% carbon, respectively; i grain size distribution obtained from the samples prepared by boron powders with 4.5, 7.3, 12 and 16.5 wt% carbon [41]. © 2017 Elsevier B.V. All rights reserved Figure 15 shows the J c of graphene-related materialdoped samples and undoped MgB 2 .…”

Section: Graphene-related Materials Dopingmentioning

confidence: 99%

“…Carbon-containing materials doping effects on H c2 , flux pinning force, and connectivity are reviewed in part 2, including SiC [13][14][15][16][17][18][19][20][21][22][23][24], organics [25][26][27][28][29][30][31][32], graphene, and graphene oxide [33][34][35][36][37][38] as well as preparing MgB 2 using carbon-encapsulated boron [39][40][41][42][43][44][45][46][47]. It has been proved that carbon has the tendency to substitute on boron site in the lattice rather than to form solid solution with MgB 2 [48].…”

Section: Introductionmentioning

confidence: 99%

“…Fig. 13 AFM images of the MgB 2 Prepared with boron powders encapsulated by a 0, b 2.8, c 4.5, d 7.8, e 12, f 16.5 wt% carbon, respectively;Grain size distributions in the samples prepared by boron powders with g 0 wt% and h 2.8 wt% carbon, respectively; i grain size distribution obtained from the samples prepared by boron powders with 4.5, 7.3, 12 and 16.5 wt% carbon[41]. © 2017 Elsevier B.V. All rights reserved…”

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Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Liu

et al. 2020

Acta Metall. Sin. (Engl. Lett.)

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For the high transition temperature (T c ) and low cost taking both raw materials and fabrication process into account, MgB 2 has been a competitive candidate to replace the conventional NiTi superconductor for high-temperature application in fault current limiters, transformers, motors, magnetic resonance imaging, adiabatic demagnetization refrigerators, generators, etc. The carbon-containing materials addition induced high critical current density (J c ) is reviewed based on their influences on the upper critical field (H c2 ), flux pinning force, and connectivity. The doping effects were compared in the overview focusing on SiC, organic dopants, and graphene-related dopants. SiC doping is featured for the high-field critical current density, which is caused by the increased H c2 attributed to the substitution of carbon on boron site and the strong flux pinning force offered by the nanosized secondary phases in the MgB 2 matrix. Organic dopants have the advantage over SiC dopant for their relatively homogeneous distribution in the MgB 2 matrix based on wet mixing of the organics and the raw boron powders. Low doping level of two-dimensional materials can improve the superconducting properties in all measured fields because of the combined advantages of carbon substitution effect and grain connectivity. MgB 2 fabricated with carbon-encapsulated boron also introduces strong flux pinning centers in MgB 2 , which show weak destruction of the connectivity of the MgB 2 grains as reflected by the low-magnetic-supercurrent behavior. High-pressure treatment and diffusion method can fabricate highdensity MgB 2 superconductors with better connectivity and increase the J c compared with the in situ and ex situ methods. KeywordsCritical current density (J c ) • Flux pinning • Doping • 2D flux pinning centers * Chuanbing Cai

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Section: Graphene-related Materials Dopingmentioning

confidence: 99%

Section: Graphene-related Materials Dopingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Liu

et al. 2020

Acta Metall. Sin. (Engl. Lett.)

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“…It is, therefore, important for one to understand the flux dynamics in highly inhomogeneous and granular samples. Unlike in the case of high T c and intermediate T c superconductors [20], the issue of intrinsic vortex pinning in BDD has not been probed.…”

Section: Introductionmentioning

confidence: 99%

Flux pinning and improved critical current density in superconducting boron doped diamond films

2018

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The ability to carry transport current in a magnetic field is the most important aspect of a superconductor. We present a detailed analysis of the upper critical field (H c2 (0)) and vortex dynamics in superconducting boron doped diamond (BDD) films. H c2 (0) measured on the samples of different doping levels revealed a high critical field of up to 7.3 T. Pinning potential U 0 , estimated using thermally activated flux-flow (TAFF) model shows that U 0 is of the order of 10 2 K. Self-field critical current density (J c ) estimated for the superconducting BDD films showed large J c ∼10 7 A/cm 2 due to enhanced flux trapping.

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Enhancing Critical Current Density of Bulk MgB₂ via Nanoscale Boron and Dy₂O₃ Doping

Muralidhar¹,

Kitamoto²,

Arvapalli³

et al. 2022

Adv Eng Mater

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Moderate critical current density (Jc) has been a long‐lasting problem in bulk MgB2 superconductors. We show a certain increment in Jc of bulk MgB2 via the use of amorphous boron precursor together with Dy2O3 doping. Dy2O3 dopant concentration varies from 0 to 2 wt%. X‐Ray diffraction (XRD) shows the formation of DyB4 particles. The critical temperature (Tc) is not affected by Dy2O3 doping and stands close to 38 K, showing that there is no Dy interaction with the MgB2 lattice. Microstructural studies show nanometer‐sized MgB2 grains. A high self‐field Jc of around 380 kA cm−2 is achieved at 20 K within the Dy2O3 doping range of 0.5–1.5 wt%. At around 1 wt% Dy2O3 doping an improved high‐field performance, 90 kA cm−2 at 2 T, 20 K, is observed. In the flux pinning diagram, 1 wt% Dy2O3 doping caused a peak shift from 0.19 (0 wt%) to 0.23. This indicates secondary pinning by DyB4 and lattice strains. Raman studies show the increase in the phonon density of states (PDOS) with increasing Dy2O3 doping.

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Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor

Cited by 11 publications

References 46 publications

Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Flux pinning and improved critical current density in superconducting boron doped diamond films

Enhancing Critical Current Density of Bulk MgB₂ via Nanoscale Boron and Dy₂O₃ Doping

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Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor

Cited by 11 publications

References 46 publications

Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Research Progress of Electromagnetic Properties of MgB2 Induced by Carbon-Containing Materials Addition and Process Techniques

Flux pinning and improved critical current density in superconducting boron doped diamond films

Enhancing Critical Current Density of Bulk MgB2 via Nanoscale Boron and Dy2O3 Doping

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Enhancing Critical Current Density of Bulk MgB₂ via Nanoscale Boron and Dy₂O₃ Doping