Raman scattering is well known as an efficient, nondestructive experimental method to study a variety of physical properties of semiconductors. The sensitivity of modern Raman spectroscopy is illustrated by several results obtained for semiconductor bulk crystals, thin layers, or low‐dimensional structures, containing selected transition metals. Among examples of Raman scattering data are detection of precipitates, a study of the influence of strain on phonon and magnon frequencies, and a search for magnetic excitations or for new phenomena, characteristic of low‐dimensional structures are described. The presented examples concern a few materials, which attract today or have attracted in the past a lot of attention. This selection is limited to Mn and Co impurities and to such well‐known semiconductor materials as MnTe, (Ga,Mn)As, ZnO, and ZnTe.
Comparison of the efficiency of Raman scattering on LO phonons (bottom right) with the PL efficiency for a semiconductor superlattice (upper left). The PL contribution to the total intensity due to the Cd0.88Zn0.12Te substrate is also shown.