Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

Iatsunskyi, Igor; Jurga, Stefan; Smyntyna, V.; Pavlenko, M. N.; Myndrul, Valeriy; Zaleska, Anastasia

doi:10.1117/12.2051489

Cited by 22 publications

(7 citation statements)

References 14 publications

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“…Raman shift at 966 cm −1 corresponds to Raman scattering from SiC crystals. The SiC peak is complementary to the TEM image shown in Figure 4 b to show the presence of crystalline SiC grown on the surface of silicon flakes [ 59 , 60 ].…”

Section: Resultsmentioning

confidence: 99%

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

Tzeng

Jhan

et al. 2021

Nanomaterials

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Silicon flakes of about 100 × 1000 × 1000 nm in sizes recycled from wastes of silicon wafer manufacturing processes were coated with combined silicon carbide (SiC) and graphitic (Resorcinol–Formaldehyde (RF)) carbon coatings to serve as active materials of the anode of lithium ion battery (LIB). Thermal carbonization of silicon at 1000 °C for 5 h forms 5-nm SiC encapsulating silicon flakes. SiC provides physical strength to help silicon flakes maintain physical integrity and isolating silicon from irreversible reactions with the electrolyte. Lithium diffuses through SiC before alloying with silicon. The SiC buffer layer results in uniform alloying reactions between lithium and silicon on the surface around a silicon flake. RF carbon coatings provide enhanced electrical conductivity of SiC encapsulated silicon flakes. We characterized the coatings and anode by SEM, TEM, FTIR, XRD, cyclic voltammetry (CV), electrochemical impedance spectra (EIS), and electrical resistance measurements. Coin half-cells with combined SiC and RF carbon coatings exhibit an initial Coulombic efficiency (ICE) of 76% and retains a specific capacity of 955 mAh/g at 100th cycle and 850 mAh/g at 150th cycle of repetitive discharge and charge operation. Pre-lithiation of the anode increases the ICE to 97%. The SiC buffer layer reduces local stresses caused by non-uniform volume changes and improves the capacity retention and the cycling life.

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Section: Resultsmentioning

confidence: 99%

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

Tzeng

Jhan

et al. 2021

Nanomaterials

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“…Similarly, the first-order Ge Raman mode was observed at 300 cm –1 . The observed Raman signal in the wavenumber range of 900–1000 cm –1 was due to multiphonon second-order Raman scattering corresponding to three, doubly degenerate transverse optical phonon modes at the X, W, and L valleys in crystalline bulk silicon. , The expected Raman scattering due to crystalline or polycrystalline Nb 2 O 5 phonon modes was not observed, thereby confirming the amorphous nature of the as-deposited Nb 2 O 5 films. Moreover, no dependence on substrate orientation or type was observed in the recorded Raman spectra.…”

Section: Resultsmentioning

confidence: 66%

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium

Hudait

Clavel

Liu

et al. 2017

ACS Appl. Mater. Interfaces

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Because of the high carrier mobility of germanium (Ge) and high dielectric permittivity of amorphous niobium pentoxide (a-NbO), Ge/a-NbO heterostructures offer several advantages for the rapidly developing field of oxide-semiconductor-based multifunctional devices. To this end, we investigate the growth, structural, band alignment, and metal-insulator-semiconductor (MIS) electrical properties of physical vapor-deposited NbO on crystallographically oriented (100), (110), and (111)Ge epilayers. The as-deposited NbO dielectrics were found to be in the amorphous state, demonstrating an abrupt oxide/semiconductor heterointerface with respect to Ge, when examined via low- and high-magnification cross-sectional transmission electron microscopy. Additionally, variable-angle spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) were used to independently determine the a-NbO band gap, yielding a direct gap value of 4.30 eV. Moreover, analysis of the heterointerfacial energy band alignment between a-NbO and epitaxial Ge revealed valance band offsets (ΔE) greater than 2.5 eV, following the relation ΔE > ΔE > ΔE. Similarly, utilizing the empirically determined a-NbO band gap, conduction band offsets (ΔE) greater than 0.75 eV were found, likewise following the relation ΔE > ΔE > ΔE. Leveraging the reduced ΔE observed at the a-NbO/Ge heterointerface, we also perform the first experimental investigation into Schottky barrier height reduction on n-Ge using a 2 nm a-NbO interlayer, resulting in a 20× increase in reverse-bias current density and improved Ohmic behavior.

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“…The analysis shows that in addition to the low-intensity oscillation of silicon, which are transverse acoustic phonons of the first (SiTA~240 cm −1 ) and second (Si2TA~300 cm −1 ) orders [25], longitudinal acoustic phonon-mode SiLA (~300 cm −1 ) [25] ar active in heterostructural spectra. The oscillations located around 620 and 680 cm −1 are combination of SiTO (X)+TA (X) and SiTO (Σ)+TA (Σ) phonons, respectively [26].…”

Section: Resultsmentioning

confidence: 97%

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

et al. 2022

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In our study, for the first time we demonstrate the advantages of using a compliant hybrid substrate of porSi/SiC to grow high-quality ultra-thin nanostructured AlxGa1−xN/GaN heterostructures using molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results obtained by micro-Raman spectroscopy, deconvolution, and the fitting of the experimental Raman spectra and subsequent calculations with information from already established literature sources show that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlxGa1−xN/GaN nanoheterostructures without requiring the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate of SiC/porSi leads to a substantial relaxation in the elastic stresses between the epitaxial film, porous silicon, and silicon carbide, which consequently affects the structural quality of the ultra-thin AlxGa1−xN/GaN epitaxial layers. The experimental and computational data obtained in our work are important for understanding the physics and technology of AlxGa1−xN/GaN nanoheterostructures and will contribute to their potential applications in optoelectronics.

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Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

Cited by 22 publications

References 14 publications

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

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