The effects of annealing in reactive gases (H 2 , N 2 , O 2 ) upon the optoelectric properties of nanophased titanium dioxide (TiO 2 ) prepared by chemical vapour deposition (CVD) were investigated. The nanocrystalline structure containing nanosize grains and pores was analyzed by grazing-incidence small-angle scattering of synchrotron radiation (GISAX). The annealing (up to 1073 K) in H 2 and N 2 generally proved detrimental to photoconductivity due to the overall increase of the electrical conductivity of the samples. In this work, the result of UV (248-404 nm) photoconductivity measurements on TiO 2 films annealed in O 2 at 773 K and 1073 K are presented. A rather long illumination time (typically 2 h) enabled us to clearly distinguish two types of nonequilibrium photoconductivity variations with time. A fast exponential photoconductivity increase occurred during the initial stage of irradiation, while a slow power-type increase was observed in the later stage. A nonlinear combination of both functions was used in a numerical fitting procedure, which allowed precise determination of the asymptotic value of exponential photoconductivity increase. A relative quantum efficiency for both as-prepared and annealed samples exhibits a nonmonotonic variation with photon energy. Such wavelength-dependence variation might be due to the electronic density function structure at the valence-band edge, or near-valence-band levels in the gap. Generally, the samples annealed at higher temperatures exhibit a higher quantum efficiency and shorter time constants of the excitation processes, in the examined UV range.