Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)

Zgheib, Ch.; McNeil, L. E.; Kazan, M.; Masri, P.; Morales, F. M.; Ambacher, O.; Pezoldt, Jörg

doi:10.1063/1.1999858

Cited by 35 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This gives the observed asymmetrical broadening towards lower wave numbers. [23] Amorphous silicon gives rise to a broad band at 480-500 cm À1 , which exists throughout the fiber diameter. Crystalline silicon exhibits a sharp peak at about 522 cm À1 , which exists throughout the outer sheath of the fibers, but is not observed clearly in the spectra of bare fibers.…”

Section: Raman Mappingmentioning

confidence: 99%

Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy

Zhang

Yang

Jin

et al. 2013

J Raman Spectroscopy

View full text Add to dashboard Cite

SiC fiber-reinforced metal matrix composite is an interesting material for aerospace industry because of its excellent properties. However, these properties are greatly influenced by fiber microstructure and thermal residual stresses introduced by the preparation of the composites. Due to complicated preparation technology, microstructure and thermal stress along SiC fiber radius varies, which makes characterization difficult. Raman spectroscopy is a non-destructive technique which provides information, at micrometer scale, on the phase composition and the crystalline state (structure and texture) of materials. Line scanning was used to assess microstructure along SiC fiber radius embedded in Ti64. The SiC coating is subdivided into three concentric parts across the fiber diameter, according to the differences in intensity and width of SiC transverse optical phonon (TO) band. Part 2 is considered to be a buffer zone connecting Part 1 and Part 3 with different deposition conditions, respectively. Amorphous Si is detected throughout fiber radius, while crystalline Si is only detected in the outer part. Thermal residual stress along fiber radius in the composite was calculated by using SiC TO band shifts with a bare fiber as reference. A cylindrical model was also used to compare with the stress data obtained from Raman shift.

show abstract

Section: Raman Mappingmentioning

confidence: 99%

Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy

Zhang

Yang

Jin

et al. 2013

J Raman Spectroscopy

View full text Add to dashboard Cite

show abstract

“…On the other hand, several efforts have been made to control the wafer [11], Si/Ge [12], and a ''checker-board'' carbonization Si wafer [13]. Despite these attempts, large warpage remains in the 3C-SiC/Si system and 3C-SiC wafers after removing Si from 3C-SiC/Si, especially with the increase of SiC thickness and area, which could lead to difficulties in applying these materials in basic processing tools such as photolithography [3,6,14].…”

mentioning

confidence: 99%

Saddle‐shape warpage of thick 3C‐SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

Sun

Izumi

Sakai

et al. 2011

Physica Status Solidi (b)

View full text Add to dashboard Cite

The technique of thick cubic silicon carbide (3C-SiC) film (up to 300 mm) deposition on undulant-Si substrates is very effective in reducing stacking faults and other planar defects of 3C-SiC wafers. However, after removing the Si substrate, 3C-SiC wafers show anisotropic warpage involving large convex curvature in the direction perpendicular to the ridge of undulation and slight concave curvature in the parallel direction, i.e., saddle shape. In this paper, we have discussed the origin of the warpage of 3C-SiC wafers. From ex situ curvature measurements and stress calculation, we found that large compressive intrinsic stress was generated during hightemperature growth (1623 K) in both parallel and perpendicular directions. To investigate the intrinsic stress distribution along the 3C-SiC film thickness direction, we performed reactive ion etching (RIE) on 3C-SiC film and determined the dependence of the SiC/Si system curvature on the remaining 3C-SiC thickness. The intrinsic stress component perpendicular to the ridge of undulation showed nonuniform distribution along the film thickness. Below the 50 mm thickness region, the distribution presented large variation. The obtained intrinsic stress distribution was very similar to the stacking fault distribution, which showed high density near the SiC/Si interface and rapidly decreased within 50 mm apart from the interface. The simulation by finite element method (FEM) has clearly explained that the anisotropic warpage of SiC wafer was led by the intrinsic stress distribution in a quantitative manner. Microstructure changes induced by the stacking fault reduction process (stacking fault collision) would be the cause of the intrinsic stress variation.

show abstract

“…The 740-cm À1 peak was assigned to defects activated mode or amorphous SiC in previous report. [8] An 875-cm À1 peak is located at the middle of SiC zone-centered TO and LO mode [about (TO + LO)/2], which can be attributed to amorphous SiC. [1,7] At the same time, amorphous SiC is observed in SiC grains (Fig.…”

Section: Resultsmentioning

confidence: 87%

“…This gives the observed asymmetrical broadening to lower wavenumber in Raman spectrum. [8,9] Richter et al proposed a phenomenological model (RWL model, Eqn (1)) and optimized by Campbell and Fauchet to interpret Raman lineshape in nanostructures. [11] I ω…”

Section: Introductionmentioning

confidence: 99%

Raman investigation of defective SiC nanocrystals

Zhang

Yang

Ouyang

et al. 2015

J Raman Spectroscopy

View full text Add to dashboard Cite

Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875-cm À1 band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915 cm À1 .

show abstract

Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si(111)

Cited by 35 publications

References 17 publications

Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy

Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy

Saddle‐shape warpage of thick 3C‐SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

Raman investigation of defective SiC nanocrystals

Contact Info

Product

Resources

About