Raman Study of Neutral and Charged Domain Walls in Lithium Niobate

Zelenovskiy, P. S.; Shur, V. Ya.; Bourson, P.; Fontana, M.D.; Кузнецов, Д. К.; Mingaliev, E. A.

doi:10.1080/00150193.2010.489810

Cited by 30 publications

(28 citation statements)

References 18 publications

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“…It has been applied recently for domain visualization in LN and LT crystals both at the surface and in the bulk. [32][33][34] It has been shown in LN that mechanical stress induced by electric field in the vicinity of domain walls leads to changes of the certain lines of the Raman spectrum. By analysis of intensity and position of these lines during 3D scanning we have obtained the set of 2D images at different depths with a sufficient contrast of the domain walls.…”

Section: Methodsmentioning

confidence: 99%

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Shur

Chezganov

Nebogatikov

et al. 2012

Journal of Applied Physics

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Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate J. Appl. Phys. 107, 063514 (2010) Formation of the dendrite-type self-organized domain structures during polarization reversal at elevated temperatures (above 230 C) has been revealed and studied in stoichiometric lithium niobate LiNbO 3 single crystals. Optical, confocal Raman, scanning electron, and piezoelectric force microscopy have been used for domain visualization. It has been shown experimentally that formation of the dendrite-like structures has been attributed to correlated nucleation caused by a field distribution in the vicinity of the charged domain walls. V C 2012 American Institute of Physics.

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Section: Methodsmentioning

confidence: 99%

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Shur

Chezganov

Nebogatikov

et al. 2012

Journal of Applied Physics

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“…37 It is necessary to point out that the domain walls in all crystals of LN and LT family can be visualized in the bulk using RCM. 38,39 The combination of all required properties leads us to choose VTE-LT as the model material for investigation of the experimental verification of the proposed fatigue model.…”

Section: Model Of the Fatigue Process Caused By Growth Of The Fromentioning

confidence: 99%

Fatigue effect in ferroelectric crystals: Growth of the frozen domains

Shur

Ахматханов

Батурин

2012

Journal of Applied Physics

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The model of the fatigue effect during cyclic switching caused by growth of the frozen domain area with charged domain walls has been proposed. It was claimed on the basis of the previous experimental results that for switching in increasing field the frozen domain area started to grow at the given sub-threshold field value and stopped at the threshold field. The influence of the shape and frequency of the field pulses used for cyclic switching has been considered. The uniaxial ferroelectric stoichiometric lithium tantalate single crystals produced by vapor transport equilibration with record low value of coercive field have been chosen as a model material for experimental verification of the model. The formation of the charged domain walls as a result of cyclic switching has been revealed by analysis of the domain images obtained by optical and Raman confocal microscopy. It has been shown that the fatigue degree is equal to the fraction of the frozen domain area. The experimental dependence of the switched charge on the cycle number has been successfully fitted by modified Kolmogorov-Avrami formula. The experimentally observed frequency independence of fatigue profile for rectangular pulses and frequency dependence for triangular pulses has been explained by proposed model.

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“…However charged domain walls inevitably originate during the process of ferroelectric polarization reversal. During a real polarization reversal in a ferroelectric capacitor, the needle-like domains with charged domain walls arised at the polar surface move through the sample [2,3,4,5]. The formation of the quasi-regular cogged charged domain wall and its expansion have been studied experimentally in LiNbO 3 under polarization reversal with uniform metal electrodes [4].…”

Section: Introductionmentioning

confidence: 99%

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

Eliseev

Morozovska²,

Svechnikov³

et al. 2011

Phys. Rev. B

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234

201

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Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of charged domain walls with different incline angle with respect to spontaneous polarization vector in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall.Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles θ~π/40 by up 3 orders of magnitude for the perpendicular domain wall (θ=π/2).There are space charge regions around the charged domain walls, but the quantitative characteristics of the regions (width and distribution of the carriers) appeared very different for the tail-to-tail and head-to-head walls in the considered donor doped ferroelectric semiconductor.The head-to-head wall is surrounded by the space charge layer with accumulated electrons and depleted donors of the same thickness (~40−100 correlation lengths). The tail-to-tail wall is surrounded by the thin space charge layer with accumulated holes of thickness ~5-10 correlation lengths and thick layer with accumulated donors of thickness ~100−200 correlation lengths, as well as the layer with depleted by electrons of thickness ~100−200 correlation lengths.* Corresponding author, e-mail: morozo@i.com.ua † Corresponding author, e-mail: vladimir.shur@usu.ru 2 The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries.The results are in qualitative agreement with recent experimental data for LiNbO 3 doped with MgO.

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Raman Study of Neutral and Charged Domain Walls in Lithium Niobate

Cited by 30 publications

References 18 publications

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Fatigue effect in ferroelectric crystals: Growth of the frozen domains

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

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