Raman study on H+-implantation effects in highly doped n-GaAs

EPR and photoacoustic studies on 30kev H+ ion-implanted n-GaAs

“…The samples were then cut into five pieces of size 2 mm  2 mm, and implanted at room temperature at 10 -6 mbar pressure with 30 keV H + doses of 10 14 , 10 15 , 10 16 and 10 17 cm -2 by using a 150 kV accelerator (J15 Sames). The ion penetration depth was estimated to be 266 nm for 30 keV H + in n-GaAs using SRIM-2000 (the details are available in previous papers [2,3]). The ion implantations were carried out at Indira Gandhi Centre for Atomic and Research (IGCAR), Kalpakkam, India.…”

“…Various studies on defects in n-GaAs are reported in literature [1][2][3][4] for H + ion implantation. Dharmarasu et al [1], from the Raman results of H + and He + -implanted crystalline n-GaAs (with carrier concentration o4.2 Â 10 17 cm À3 ) reported lattice damages at higher doses.…”

“…Murugan et al [2] studied H + implantation effects in highly doped n-GaAs by Raman measurements and demonstrated the passivation effect of charge carriers at a dose of 10 15 cm À2 from LO phonon-plasmon coupling [LOPC] mode. From LOPC, they have estimated the carrier concentration and the polarity to conclude that there is a type change.…”

“…The details of Hall measurements and the polarity of charge carriers are already given in our earlier paper [2] and so not repeated here. This type conversion is studied here by electron paramagnetic resonance (EPR), as this is one of the most powerful methods that can be used to correlate with optical spectra and photoconductive measurements, for the identification of defects.…”

Investigation of proton damage in III-V semiconductors by optical spectroscopy

“…Irradiation damage on GaAs has already been extensively studied, including the determination of the range of protons and helium ions [8], irradiation induced changes of index of refraction [9], carrier compensation [10], and annealing effects [11], to give some examples. However, for InGaP material we found only a few reports of irradiation experiments, mostly related to the electrical parameters of the devices [12,13] and few about defects in the material [14,15].…”